2014
DOI: 10.1587/transele.e97.c.397
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High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

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Cited by 2 publications
(1 citation statement)
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“…21) In our previous work, multiple stacked structures of Si-QDs were successfully fabricated by repeating the process sequence consisting of Si-QDs formation using low-pressure chemical vapor deposition and surface oxidation. [22][23][24][25] We demonstrated electron FE from a 6-fold stacked structure of Si-QDs by applying DC biases of −6 V and over. 26) We also fabricated a 6-fold stacked structure with phosphorous doped Si-QDs and characterized their electron FE under a DC bias application.…”
Section: Introductionmentioning
confidence: 99%
“…21) In our previous work, multiple stacked structures of Si-QDs were successfully fabricated by repeating the process sequence consisting of Si-QDs formation using low-pressure chemical vapor deposition and surface oxidation. [22][23][24][25] We demonstrated electron FE from a 6-fold stacked structure of Si-QDs by applying DC biases of −6 V and over. 26) We also fabricated a 6-fold stacked structure with phosphorous doped Si-QDs and characterized their electron FE under a DC bias application.…”
Section: Introductionmentioning
confidence: 99%