Many
toxic gases are mixed into the atmosphere because of increased
air pollution. An efficient gas sensor is required to detect these
poisonous gases with its ultrasensitive ability. We employed the thermal
evaporation method to deposit an n-SnSe2/p-SnO/n-SnSe heterojunction
and observed a temperature-dependent n–p–n switching
NO2 gas sensor with high selectivity working at room temperature
(RT). The structural and morphological properties of the material
were studied using the characterization techniques such as XRD, SEM,
Raman spectroscopy, XPS, and HRTEM, respectively. At RT, the device
response was 256% for 5 ppm NO2. The response/recovery
times were 34 s/272 s, respectively. The calculated limit of detection
(LOD) was ∼115 ppb with a 38% response. The device response
was better with NO2 gas than with SO2, NO, H2S, CO, H2, and NH3. The mechanism of
temperature-dependent n–p–n switching, fast response,
recovery, and selective detection of NO2 at RT has been
discussed on the basis of physisorption and charge transfer. Thus,
this work will add a new dimension to 2D materials as selective gas
detectors at room temperature.