High-sensitivity 2.5-μm pixel CMOS image sensor realized using Cu interconnect layers

Tatani, Keiji; Enomoto, Yoshiyuki; Yamamoto, Atsuhiko; Goto, Takayuki; Abe, Hideshi; Hirayama, Teruo

doi:10.1117/12.649191

Cited by 3 publications

(2 citation statements)

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“…Cu interconnect technologies are installed instead of the conventional Al interconnect process in the CIS. The sensitivity gain using the Cu process is 20% higher than that achieved by the Al proces 6) (Figs. 2 and 3).…”

Section: Cis Pixel Structurecontrasting

confidence: 50%

Low-noise Imaging System with CMOS Sensor for High-Quality Imaging

Sumi

2006

2006 International Electron Devices Meeting

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Image sensors are widely used in the high-volume markets of digital still cameras and camcorders. In recent years, mobile phones with cameras have employed CMOS image sensors because of their low power consumption and single power supply. Initially, CMOS image sensors were inexpensive and provided poor imaging performance. However, more recently, some CMOS image sensors have achieved high-quality imaging performance comparable to that of the CCD. The present paper reviews the challenges of image sensor development over the last few decades and discusses the technology and design architecture for low-noise mega-pixel CMOS image sensors.

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Section: Cis Pixel Structurecontrasting

confidence: 50%

Low-noise Imaging System with CMOS Sensor for High-Quality Imaging

Sumi

2006

2006 International Electron Devices Meeting

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“…The sensor is scaled down to get a higher resolution due to higher pixel count. Several approaches such as a Cu process to reduce the pixel height and inner micro-lenses to gather rays of incident light have been proposed to overcome electro-optical challenges [2][3][4]. The BI process has been reported as one of the most promising technologies to improve optical performance [5,9].…”

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confidence: 99%

A 1/2.3-inch 10.3Mpixel 50frame/s Back-Illuminated CMOS image sensor

Wakabayashi¹,

Yamaguchi²,

Okano³

et al. 2010

2010 IEEE International Solid-State Circuits Conference - (ISSCC)

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This paper presents a 1/2.3-inch 10.3Mpixel Back-Illuminated (BI) CMOS image sensor that targets both digital still camera (DSC) and high-definition camcorder applications. These applications require high-pixel-count, high-sensitivity, high saturation signal, low noise and high-speed imaging for image quality [1]. The sensor is scaled down to get a higher resolution due to higher pixel count. Several approaches such as a Cu process to reduce the pixel height and inner micro-lenses to gather rays of incident light have been proposed to overcome electro-optical challenges [2][3][4]. The BI process has been reported as one of the most promising technologies to improve optical performance [5,9]. This BI image sensor includes a 10b/12b analog-to-digital converter (ADC), an internal phase-locked loop (PLL) and a 10b serial LVDS interface to enable a data-rate up to 576MHz.Pixel sharing increases the sense-node capacitances because of: floating-diffusion (FD) regions linked in series, and interconnect capacitance. The FD capacitance causes a trade-off between conversion gain and full well capacity [4,6]. The imager uses a 1.65×1.65µm 2 4-shared-pixel FD boost-driving architecture with a view to optimize for high fill factor, high conversion gain and high full well capacity.

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Challenges of image-sensor development

Suzuki¹

2010

2010 IEEE International Solid-State Circuits Conference - (ISSCC)

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High-sensitivity 2.5-μm pixel CMOS image sensor realized using Cu interconnect layers

Cited by 3 publications

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Low-noise Imaging System with CMOS Sensor for High-Quality Imaging

Low-noise Imaging System with CMOS Sensor for High-Quality Imaging

A 1/2.3-inch 10.3Mpixel 50frame/s Back-Illuminated CMOS image sensor

Challenges of image-sensor development

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