High-sensitivity absorption spectroscopy on a microwave plasma-assisted chemical vapour deposition diamond growth facility

Erickson, Christopher; Jameson, W B; Watts-Cain, J; Menningen, K. L.; Childs, M. A.; Anderson, L. W.; Lawler, J. E.

doi:10.1088/0963-0252/5/4/019

Cited by 10 publications

(3 citation statements)

References 22 publications

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“…Consequently, significant values of the gas temperatures, i.e. the temperature of the heavy species translational mode, characterize moderate pressure plasmas used for diamond deposition [14,15]. Significant thermal chemistry between heavy species is obtained under these moderate pressure/high temperature conditions.…”

Section: Introductionmentioning

confidence: 99%

Modelling of diamond deposition microwave cavity generated plasmas

Hassouni¹,

Silva²,

Gicquel³

2010

J. Phys. D: Appl. Phys.

114

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Some aspects of the numerical modelling of diamond deposition plasmas generated using microwave cavity systems are discussed. The paper mainly focuses on those models that allow (i) designing microwave cavities in order to optimize the power deposition in the discharge and (ii) estimating the detailed plasma composition in the vicinity of the substrate surface. The development of hydrogen plasma models that may be used for the self-consistent simulation of microwave cavity discharge is first discussed. The use of these models for determining the plasma configuration, composition and temperature is illustrated. Examples showing how to use these models in order to optimize the cavity structure and to obtain stable process operations are also given. A transport model for the highly reactive H2/CH4 moderate pressure discharges is then presented. This model makes possible the determination of the time variation of plasma composition and temperature on a one-dimensional domain located on the plasma axis. The use of this model to analyse the transport phenomena and the chemical process in diamond deposition plasmas is illustrated. The model is also utilized to analyse pulsed mode discharges and the benefit they can bring as far as diamond growth rate and quality enhancement are concerned. We, in particular, show how the model can be employed to optimize the pulse waveform in order to improve the deposition process. Illustrations on how the model can give estimates of the species density at the growing substrate surface over a wide domain of deposition conditions are also given. This brings us to discuss the implication of the model prediction in terms of diamond growth rate and quality.

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Section: Introductionmentioning

confidence: 99%

Modelling of diamond deposition microwave cavity generated plasmas

Hassouni¹,

Silva²,

Gicquel³

2010

J. Phys. D: Appl. Phys.

114

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“…The only measurements available for comparison have been made at 20 Torr, at which we obtained [H] ≈ 3%. Hsu [3] measured [H] = 0.1% and Erickson et al [4] estimated [H] <0.8%. Both Hsu and Erickson et al made measurements in discharges containing <5% of CH 4 .…”

Section: Resultsmentioning

confidence: 99%

“…Mass spectrometry was used by Hsu to measure H atom densities near the deposition substrate at 20 Torr [3]. Measurements of the CH 3 and CH radical densities were used by Erickson et al [4] to place an upper limit on the H atom density at a pressure of 20 Torr. Chenevier et al [5] have used two-photon laserinduced fluorescence (LIF) to measure the relative H atom density profile in a bell-jar reactor.…”

Section: Introductionmentioning

confidence: 99%

Production and loss of H atoms in a microwave discharge in

Wouters¹,

Khachan²,

Falconer³

et al. 1998

J. Phys. D: Appl. Phys.

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Two-photon laser-induced fluorescence (LIF) is used to study the production and loss of H atoms in a pulsed microwave discharge in over the pressure range 1-50 Torr. Absolute measurements of the H atom density are made at the end of the pulse. These measurements were calibrated using a new technique based on the decay rate of the LIF signal. The temporal variation of emission during pulsing of the discharge is used to estimate the rate of dissociation of , which compares well with the predictions of a one-dimensional model for the electron energy distribution function. This measurement also gives the wall recombination probability for H atoms, which is compared with that obtained by LIF measurement of the decay of the H atom density in the pulse afterglow.

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