High sensitivity Hall devices with AlSb/InAs quantum well structures

Abstract

AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2 · V−1 · s−1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

Ga composition effects on the electrical parameters of (Al,Ga)Sb/InAs two-dimensional electron gas

“…AlSb/InAs system has attracted enormous attention in practical device applications, such as quantum cascade lasers [1][2][3], infrared detectors [4], magnetic sensors [5][6][7] and spin field-effect transistors [8]. Especially, AlSb/InAs is a highly interesting system for high electron mobility transistors (HEMTs) due to its high electron mobility (30 000 cm 2 V −1 s −1 at 300 K), high peak velocity (4 × 10 7 cm s −1 ), and large conduction-band offset (1.35 eV) [9].…”