High Sensitivity Horizontal Hall Sensors in 0.35 um BCD Technology

Zhang, Zhenyan; Lyu, Fei; He, Shuzhuan; Li, Li; Sha, Jian; Pan, Hongbing; Zhang, Zexia; Pan, Yifan

doi:10.1109/imccc.2015.113

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A Sensitivity and Offset1

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2022

2024

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Cited by 3 publications

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“…This result suggests the possible presence of a systematic error in the silicon process that should be further investigated and likely be tackled in future realizations. Whereas state-of-the-art spun Hall sensors report a sensitivity up to 964 V/AT and offset as low as 15 μV [20], these cannot typically feature MHz-range bandwidths and, anyway, differ from this prototype in terms of technology, sensing methodology, biasing, and layout, which do not allow for a fair comparison.…”

Section: A Sensitivity and Offsetmentioning

confidence: 99%

Static Characterization of the X-Hall Current Sensor in BCD10 Technology

Gibiino¹,

Crescentini²,

Marchesi³

et al. 2022

Proceedings of the 25th IMEKO TC4 International Symposium and 23rd International Workshop on ADC and DAC Modelling and Testing

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This work presents on-wafer characterization measurements of the X-Hall current sensor architecture implemented in 90-nm BCD10 silicon process by STMicroelectronics. With respect to a previous implementation, technological improvements in terms of active region, isolation layers, and metal stack configuration result in a substantially improved sensitivity. In addition, it is reported that the sensitivity can be further improved by applying a negative voltage to the depletion layer.

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Section: A Sensitivity and Offsetmentioning

confidence: 99%