High-sensitivity InSb thin-film micro-Hall sensor arrays for simultaneous multiple detection of magnetic beads for biomedical applications

Togawa, Kiyoshi; Sanbonsugi, H.; Łapicki, Adam; Abe, Masanori; Handa, Hiroshi; Sandhu, Adarsh

doi:10.1109/tmag.2005.854789

Cited by 32 publications

(17 citation statements)

References 8 publications

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“…[1][2][3][4][5][6] It has led to the evolution not only in small Hall components used in video cassette recorders (VCR), optical drives but also household electrical appliance and car industry. 7 Furthermore, InSb has high expectation in high resolution radiation detectors.…”

Section: Introductionmentioning

confidence: 99%

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

et al. 2016

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“…Hall voltage sensor is developed in recent years measuring the control voltage of a new generation of industrial electricity sensor. It is a new type of high-performance electrical detection element [1] . Hall voltage sensor has the excellent electrical performances of wide bandwidth, short response time, strong anti-interference ability, high original side and secondary side of insulation voltage [2] .…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of Hall Voltage Sensor Based on Physical Modeling Environment

Li¹,

Yang²,

Ma³

2016

Proceedings of the 2016 4th International Conference on Sensors, Mechatronics and Automation (ICSMA 2016)

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Abstract.Hall voltage sensor is one of the most widely used sensors in the field of today's electronic measurement. It can completely replace the traditional transformer and shunt, and with the advantages of high precision, good linearity, wide frequency band, fast response, strong overload capacity and without losing the energy of measurement circuit, etc. This article by MATLAB / simulink simulation tool establishes under a Simscape modeling environment can reflect the hall voltage sensor measurement principle, internal mechanism and the measurement error of the simulation model. The model reflects the principle and internal structure of the closed-loop hall voltage sensor, introduces the interference terms such as noise, and the model has no load effect on the measuring circuit, so that the simulation system can better reflect the actual situation.

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“…Hall sensors, with an active area of micron and submicron sizes, are fabricated from various metals (Au, Al) [5], alloys (NiFe) [6], (FePt) [7], semiconductors (InSb) [8], (InAs) [9], graphene [10] and carbon nanotubes [11]. Nevertheless, theses various types of materials are not compatible with high performance CMOS processes.…”

Section: Introductionmentioning

confidence: 99%

Optimal geometry of CMOS voltage-mode and current-mode vertical magnetic hall sensors

et al. 2015

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Abstract-Four different geometries of a vertical Hall sensor are presented and studied in this paper. The current spinning technique compensates for the offset and the sensors, driven in current-mode, provide a differential signal current for a possible capacitive integration over a defined time-slot. The sensors have been fabricated using a 6-metal 0.18-μm CMOS technology and fully experimentally tested. The optimal solution will be further investigated for bendable electronics. Measurement results of the four structures over the 10 available samples show for the best geometry an offset of 41.66 ± 8 μT and a current-mode sensitivity of 9 ± 0.1 %/T. Since the figures widely change with geometry, a proper choice secures optimal performance.

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High-sensitivity InSb thin-film micro-Hall sensor arrays for simultaneous multiple detection of magnetic beads for biomedical applications

Cited by 32 publications

References 8 publications

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

Modeling and Simulation of Hall Voltage Sensor Based on Physical Modeling Environment

Optimal geometry of CMOS voltage-mode and current-mode vertical magnetic hall sensors

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