High sensitivity of room-temperature terahertz photodetector based on silicon

Qiu, Qinxi; Ma, Wanli; Li, Jingbo; Jiang, Lin; Mao, Wangchen; Lu, Xuehui; Yao, Niangjuan; Shi, Yi; Huang, Zhiming

doi:10.1016/j.isci.2022.105217

Cited by 4 publications

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Hasan,

Khan,

Shahzadi

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequencies. In this review, the recent advances in Si‐based THz detectors using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, and improved thermal isolation. The different types of THz detectors exploiting SOI substrate, such as conventional metal‐oxide‐semiconductor field effect transistors (MOSFETs), junction‐less MOSFETs, junction‐less nanowires field effect transistors (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, and single electron transistor (SET), are discussed, and their key performances in terms of responsivity, noise equivalent power (NEP), bandwidth, and dynamic range are compared. The challenges and opportunities for further improvement of SOI THz detectors, such as device scaling, integration, and modulation, are also highlighted. This review may offer compelling evidence supporting the idea that SOI THz detectors have the potential to facilitate high performance, low power consumption, and scalability—qualities essential for advancing next‐level technologies.

show abstract

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Hasan,

Khan,

Shahzadi

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

Recent Progress of 2D Materials‐Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Abdullah,

Younis,

Sohail

et al. 2024

Small

View full text Add to dashboard Cite

Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic‐thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip‐scale production and integration of 2D materials‐based photodetectors. The extremely sensitive detection at ambient temperature with ultra‐fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials‐based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.

show abstract

Fabrication and characterization of suspended La_0.7Sr_0.3MnO₃ nanofibers for high-sensitive and fast-responsive infrared bolometer

Paul,

Vadnala,

Bonam

et al. 2023

J. Micromech. Microeng.

View full text Add to dashboard Cite

La1−x Sr x MnO3 manganite oxides have shown great potential for infrared (IR) sensing. In this study, La0.7Sr0.3MnO3 (LSMO) nanofibers, synthesized by a simple electrospinning process, are suspended between gold interdigitated electrode (IDE). These electrodes, which acts as a supporting platform for the dangling nanofiber, are microelectromechanical systems based that can be fabricated quickly and economically with fewer fabrication steps. Due to the large surface-area-to-volume ratio, these fibers have outstanding thermo-electrical properties, which puts them in the leagues of materials suitable for IR sensing. Performance-wise these hanging nanofibers belong to a class of promising thermal sensors due to negligible thermal loss. The optoelectrical characterization shows its temperature coefficient of resistance (TCR) is −1.48%K−1, and its electrical resistance follows an inverse square law for distance from the IR source. The fabricated LSMO nanofibers based microbolometer has a significantly low thermal time constant with average thermal response and recovery time of 63 ms and 77 ms, respectively. Furthermore, they show encouraging bolometric properties with thermal conductance, thermal capacitance, voltage responsivity, and thermal noise limited detectivity of 3.6 × 10−3WK−1, 0.2268 × 10−3JK−1 , 1.96 × 105VW−1, and 3.7 × 108cm Hz1/2W−1 respectively. The high voltage responsivity and TCR, commensurate with the ultralow response and recovery time confirm that the fabricated Microbolometer can find industrial applications as thermal sensors.

show abstract

High sensitivity of room-temperature terahertz photodetector based on silicon

Cited by 4 publications

References 33 publications

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Recent Progress of 2D Materials‐Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Fabrication and characterization of suspended La_0.7Sr_0.3MnO₃ nanofibers for high-sensitive and fast-responsive infrared bolometer

Contact Info

Product

Resources

About

High sensitivity of room-temperature terahertz photodetector based on silicon

Cited by 4 publications

References 33 publications

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Recent Progress of 2D Materials‐Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Fabrication and characterization of suspended La0.7Sr0.3MnO3 nanofibers for high-sensitive and fast-responsive infrared bolometer

Contact Info

Product

Resources

About

Fabrication and characterization of suspended La_0.7Sr_0.3MnO₃ nanofibers for high-sensitive and fast-responsive infrared bolometer