High-Sensitivity Solar-Blind Photodetector Based on β-Ga<sub>2</sub>O<sub>3</sub> Schottky Junction Under Forward and Reverse Bias

Fu, Shihao; Wang, Yuefei; Gao, Chong; Han, Yurui; Fu, Rongpeng; Wang, Longpu; Li, Bingsheng; Ma, Jiangang; Fu, Zhendong; Xu, Haiyang; Liu, Yichun

doi:10.1109/led.2023.3297101

Cited by 8 publications

(1 citation statement)

References 26 publications

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“…Figures 1d and S5 show the O 1s core-level spectrum of Ga 2 O 3 and ZnO:V films, and the O 1s spectrum is composed of two peaks by Gaussian fitting. The two peaks centered at about 530.9 and 531.6 eV correspond to the lattice oxygen and oxygen vacancy-related bonds, 37 respectively. The ratio of O II /(O I +O II ) is 0.29 and 0.34, indicating that higher oxygen vacancy defects in the Ga 2 O 3 and ZnO:V films.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Performance of Self-Powered Ga₂O₃/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

Wang,

Ma,

Han

et al. 2024

ACS Appl. Mater. Interfaces

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Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors (PDs) for their switchable spontaneous polarization. However, the utilization of ferroelectric materials to modulate the built-in electric field and energy band at the junction interface has rarely been investigated. Herein, we design and fabricate self-powered solar-blind UV PDs based on a Ga 2 O 3 /ZnO:V heterojunction. The performance of the Ga 2 O 3 /ZnO:V PD is significantly enhanced through the reasonable coupling of ferroelectricity and piezoelectricity within the ZnO:V film. The device at 260 nm exhibits excellent photoelectric properties with high peak responsivity of 64.5 mA/W, a specific detectivity of 3.8 × 10 10 Jones, and a rise/ decay time of 1.9/45.2 μs, together with reproducibility and stability. Systematical energy band diagram analysis reveals that the excellent performance of Ga 2 O 3 /ZnO:V PD can be attributed to the driving forces arising from the addition of the depolarization field and piezoelectric field, which increases the intensity of built-in electric field and promotes the separation and transport of photogenerated carriers at the heterojunction interface. The findings of our research provide a novel avenue and valuable guidance for the design of high-performance self-powered photodetectors.

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Section: Resultsmentioning

confidence: 99%

Enhanced Performance of Self-Powered Ga₂O₃/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

Wang,

Ma,

Han

et al. 2024

ACS Appl. Mater. Interfaces

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Self-powered FTO/amorphous-(In0.23Ga0.77)2O3/spiro-OMeTAD ultraviolet photodetector with broadband responsivity and wavelength discrimination capability

Nie,

Lu,

Jiao

et al. 2024

Materials Science in Semiconductor Processing

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Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

Gao,

Wang,

et al. 2024

Materials Today Physics

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High-Sensitivity Solar-Blind Photodetector Based on β-Ga₂O₃ Schottky Junction Under Forward and Reverse Bias

Cited by 8 publications

References 26 publications

Enhanced Performance of Self-Powered Ga₂O₃/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

Enhanced Performance of Self-Powered Ga₂O₃/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

Self-powered FTO/amorphous-(In0.23Ga0.77)2O3/spiro-OMeTAD ultraviolet photodetector with broadband responsivity and wavelength discrimination capability

Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

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High-Sensitivity Solar-Blind Photodetector Based on β-Ga2O3 Schottky Junction Under Forward and Reverse Bias

Cited by 8 publications

References 26 publications

Enhanced Performance of Self-Powered Ga2O3/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

Enhanced Performance of Self-Powered Ga2O3/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

Self-powered FTO/amorphous-(In0.23Ga0.77)2O3/spiro-OMeTAD ultraviolet photodetector with broadband responsivity and wavelength discrimination capability

Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

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Product

Resources

About

High-Sensitivity Solar-Blind Photodetector Based on β-Ga₂O₃ Schottky Junction Under Forward and Reverse Bias

Enhanced Performance of Self-Powered Ga₂O₃/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

Enhanced Performance of Self-Powered Ga₂O₃/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity