High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

Rysbaev, A. S.; Normurodov, M. T.; Rakhimov, Abdulla; Tursunmetova, Z. A.; Tashatov, A. K.

doi:10.1134/s1027451020060142

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…As a result, the band gap narrows. Recall that starting from this dose, a noticeable disordering of the near-surface layer and the formation of silicide phases occur [17][18][19]. At an irradiation dose D = 6x10 16 cm -2 , the barium impurity band overlaps with the conduction band and the Fermi level E F appears in the conduction band of ion-implanted Si.…”

Section: -7 (Where Dn/de (E) Is the Derivative Of The Energy Distribu...mentioning

confidence: 99%

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Imanova¹,

Bekpulatov²

2021

NANO

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The processes of formation of nanoscale silicide films during the implantation of Ba + ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 10 16 cm -2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba + ions also contributes to defects formed as a result of strong disordering of the crystal lattice.

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Section: -7 (Where Dn/de (E) Is the Derivative Of The Energy Distribu...mentioning

confidence: 99%

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Imanova¹,

Bekpulatov²

2021

NANO

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Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

et al. 2021

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Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

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High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

Cited by 2 publications

References 8 publications

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

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High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

Cited by 2 publications

References 8 publications

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba&lt;sup&gt;+&lt;/sup&gt; Ions in Si

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba&lt;sup&gt;+&lt;/sup&gt; Ions in Si

Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

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Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si