High spatial resolution extended energy loss fine structure investigations of silicon dioxide compounds

Yuan, Zou Wei; Csillag, Stefan; Tafreshi, M. A.; Colliex, C.

doi:10.1016/0304-3991(95)00037-2

Cited by 17 publications

(10 citation statements)

References 11 publications

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“…lower peak intensity signifies oxygen deficiency). Double peaks characteristic can be seen in the O K edge spectra of HfO 2 , consistent with the literature [172]. A growing 537.8 eV peak intensity is observed in both HfO 2 film and SiO 2 IL for the samples annealed with UVO.…”

Section: 15supporting

confidence: 90%

“…More interestingly, the intensity of the peak centered at ~560 eV is enhanced by the two-step anneal. The 560 eV peak was also observed in the SiO 2 EELS results reported in literature and was attributed to the stretched O-O bonds [172]. This implies that, apart from the high-κ, the quality of the underlying SiO 2 IL was also improved by the UVO anneal, thereby contributing to a larger reliability improvement margin as compared with the similar gate stacks without intentional IL.…”

Section: (A)supporting

confidence: 74%

“…5.18. as-dep UVO Huang et al [172] Ragnarsson et al [179] Poly/SiO 2 EOT (nm) 5.20: (a) Average gate current density versus gate voltage (J g -V g ) characteristics of the various TiN/HfO 2 gate stacks measured under room temperature (300 K). More than ten devices were measured for each split.…”

Section: Reliability Of Ultrathin Sub-1nm Eot Hkmg Gate Stackmentioning

confidence: 99%

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Nanoscale characterization of advanced high-?? gate dielectric stacks via scanning tunneling microscopy

Yew¹

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My sincere gratitude to my supervisor, Prof. Ang Diing Shenp from Nanyang Technological University (NTU), for his sound technical guidance, inspiring ideas, constructive discussions and constant encouragement throughout the course of my Ph.D research works. His immense knowledge in device physics, sharp analytical skills, effective writing skills, high research integrity and great passion in research have sparked my growing enthusiasm in research field. He is a kind and committed person, who is willing to spend time and patiently works things out with us whenever we faced difficulties in our works. Prof. D. S. Ang is more than a research supervisor to me; he has always provided me with invaluable advices, be it in research, career or life. I am very grateful and lucky to have the opportunity to work under Prof. D. S. Ang's supervision. I would like to express my sincere gratitude to Prof. Pey Kin Leong (during his tenure with NTU) for granting me access to the ultra-high vacuum scanning tunneling microscopy (UHV-STM) system and Dr. Ong Yi Ching (currently with TSMC Taiwan) for patiently training me in handling the UHV-STM system. She has been very kind to share her technical experience in the high-κ metal oxide characterization using STM. My appreciation to Dr. Lakshmi Kanta Bera for his technical advices on device fabrication process. This project is supported in part by the Singapore Ministry of Education under a research grant MOE2009-T2-1-050 and in part by the NTU.

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Section: 15supporting

confidence: 90%

Section: (A)supporting

confidence: 74%

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Nanoscale characterization of advanced high-?? gate dielectric stacks via scanning tunneling microscopy

Yew¹

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“…The Si L 2,3 near edge structures and the plasmon peak are characteristic of SiO 2 . 26,27 To further investigate the chemical state of Si and Ni aer oxidation, XPS was carried out ( Fig. S1c-f in ESI †).…”

Section: Determination Of the Active Materials Massmentioning

confidence: 99%

Electrodeposited three-dimensional Ni–Si nanocable arrays as high performance anodes for lithium ion batteries

Líu

Meng

et al. 2013

Nanoscale

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A configuration of three-dimensional Ni-Si nanocable array anodes is proposed to overcome the severe volume change problem of Si during the charging-discharging process. In the fabrication process, a simple and low cost electrodeposition is employed to deposit Si instead of the common expansive vapor phase deposition methods. The optimum composite nanocable array electrode achieves a high specific capacity ~1900 mA h g(-1) at 0.05 C. After 100 cycles at 0.5 C, 88% of the initial capacity (~1300 mA h g(-1)) remains, suggesting its good capacity retention ability. The high performance of the composite nanocable electrode is attributed to its excellent adhesion of the active material on the three-dimensional current collector and short ionic/electronic transport pathways during cycling.

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“…Another straight forward technique, the ratio-method, was employed by Diociaiuti et al [52] to determine the increase in structural disorder due to size effects of Pd clusters using M4,5 edge of Pd. The ratio-method was also used by Yuan et al [53] for the analysis of O K-edge to determine the change in O-Si bond length in Si-SiO2 interface. From the above discussion, it can be concluded that using the ratio method, EXELFS analysis can be employed to determine the increase in the nearest neighbor distance at the GB's.…”

Section: Extended Electron Energy Loss Fine Structure (Exelfs)mentioning

confidence: 99%

Determining the Electron Density and Volume Expansion at Grain Boundaries Using Electron Energy-Loss Spectroscopy

Nandi

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Grain boundary (GB) energy is an essential parameter in determining the microstructure of metallic and other materials, and tremendous effort has gone into determining the structure, energy and properties of GB's. Presently, GB energies are most often calculated because it is difficult and/or tedious to determine them experimentally. Grain boundary modelling studies have revealed correlations between GB energy and: i) a change in electron density due an atom deficit at the GB, and ii) a rigid body translation normal to the GB, or the so-called normal volume expansion, which may also be associated with an atom deficit. In this work, valence electron energy loss spectroscopy (VEELS) and extended energy-loss fine structure (EXELFS) analysis in a scanning/transmission (S/TEM) electron microscope were used to examine fundamental GB properties such as the electron density and volume expansion, respectively. iv v ACKNOWLEDGEMENTS First and foremost, I'd like to sincerely thank Prof. James M. Howe for his valuable feedback, scholarly guidance and for creating a very friendly atmosphere to carry out this research. His patience and timely availability for discussions greatly contributed to successful completion of this work. I consider myself extremely lucky to be under his tutelage for my professional and personal development. His dedication, sincerity and creative methods for scientific research will continue to inspire me. My committee members, Prof. Leonid V. Zhigilei, Prof. Louis A. Bloomfield, Prof. Mool C. Gupta and Prof. Gary J. Shiflet were of great help and guidance during this work. I'm deeply indebted for their feedback and deep insights. Thanks are also due to Drs. Raymond R. Unocic and Xiahan Sang at the Center for Nanophase Materials Sciences at Oak Ridge National Laboratory, and Drs. Eric Stach, Dong Su and Vitor Manfrinato at the Center for Functional Nanomaterials at Brookhaven National Laboratory for their collaborative contribution to this research work. I am indebted to Prof. D. Molodov in the Institute for Metallurgy and Metal Physics at RWTH, Aachen University for proving the Al bicrystals. I'd also like to thank Dr. Helge Heinrich for training me on TITAN, Mr. Richard White for maintaining the microscopes and Mr. Eric Hoglund for writing the deconvolution routine. Financial support for this research by the NSF Grant DMR-1106230 and the VPR Office at UVA is acknowledged with thanks. Thanks also go to my friends for making my stay in Charlottesville a very pleasant and memorable one. Last, but not the least, I thank my parents for their love and support without which this work would have been impossible.

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High spatial resolution extended energy loss fine structure investigations of silicon dioxide compounds

Cited by 17 publications

References 11 publications

Nanoscale characterization of advanced high-?? gate dielectric stacks via scanning tunneling microscopy

Nanoscale characterization of advanced high-?? gate dielectric stacks via scanning tunneling microscopy

Electrodeposited three-dimensional Ni–Si nanocable arrays as high performance anodes for lithium ion batteries

Determining the Electron Density and Volume Expansion at Grain Boundaries Using Electron Energy-Loss Spectroscopy

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