High spatial resolution subsurface thermal emission microscopy

Ippolito, S.B.; Thorne, S. A.; Eraslan, M.G.; Goldberg, Bennett B.; Ünlü, M. Selim; Leblebici, Yusuf

doi:10.1109/leos.2003.1253012

Cited by 8 publications

(8 citation statements)

References 6 publications

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“…The resolution measured along the dotted line is 1.7 µm, which is the diffraction limit. In silicon near the resistor ∆T Si ≈ 27 K White lamp ∆T (K) (Ippolito et al, 2004;Breitenstein et al, 2006). Here, the use of short wavelengths, down to l ¼ 1,100 nm, brings the theoretical resolution limit to 1:22ðl=2n Si Þ ¼ 192 nm:…”

Section: Ultraviolet Illumination Thermoreflectancementioning

confidence: 99%

High resolution thermal imaging inside integrated circuits

et al. 2007

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If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -Heating is a major cause of failure in integrated circuits. The authors have designed thermoreflectance-based systems operating at various wavelengths in order to obtain temperature images. This paper aims to explore the possibilities of each wavelength range and detail the charge coupled device (CCD)-based thermal imaging tools dedicated to the high-resolution inspection of integrated circuits. Design/methodology/approach -Thermoreflectance is a non-contact optical method using the local reflectivity variations induced by heating to infer temperature mappings, and can be conducted at virtually any wavelength, giving access to different types of information. In the visible, the technique is now well established. It can probe temperatures through several micrometers of transparent encapsulation layers, with sub-mm spatial resolution and 100 mK thermal resolution. Findings -In the ultraviolet range, dielectric encapsulation layers are opaque and thermoreflectance gives access to the surface temperature. In the near infrared, thermoreflectance is an interesting solution to examine chips turned upside down, since these wavelengths can penetrate through silicon substrates and give access to the temperature of the active layers themselves.Research limitations/implications -The authors show that the illumination wavelength of thermoreflectance should be chosen with care depending on the region of the integrated circuit (surface, above, or below the substrate) to be investigated. Practical implications -This set of versatile and sensitive tools makes thermoreflectance an interesting tool for the semiconductor industry, either during prototyping or as a characterization tool after fabrication. Originality/value -The CCD-based thermoreflectance approach adopted here allows fast, non-contact, high-resolution thermal imaging of integrated circuits.

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Section: Ultraviolet Illumination Thermoreflectancementioning

confidence: 99%

High resolution thermal imaging inside integrated circuits

et al. 2007

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“…Backside imaging of integrated circuits is a well established technique for failure analysis [23][24][25]. Bright field images at near-infrared (IR) wavelengths (e.g.…”

Section: Optical Watermarks: Design and Measurementmentioning

confidence: 99%

“…λ ∼ 1 − 2 µm) can be used for passive measurements, such as inspecting the fidelity of the metal wires [26]. The active functionality of the circuit can also be probed via techniques such as thermal imaging [23] or laser-voltage imaging (LVI) [24]. These techniques record power dissipation via heat generation and the switching response of transistors respectively.…”

Section: Optical Watermarks: Design and Measurementmentioning

confidence: 99%

Detecting hardware trojans using backside optical imaging of embedded watermarks

Zhou

Adato

Zangeneh

et al. 2015

Proceedings of the 52nd Annual Design Automation Conference

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Hardware Trojans are a critical security threat to integrated circuits. We propose an optical method to detect and localize Trojans inserted during the chip fabrication stage. We engineer the fill cells in a standard cell library to be highly reflective at near-IR wavelengths so that they can be readily observed in an optical image taken through the backside of the chip. The pattern produced by their locations produces an easily measured watermark of the circuit layout. Replacement, modification or re-arrangement of these cells to add a Trojan can therefore be detected through rapid postfabrication backside imaging. We evaluate our approach using various hardware blocks where the Trojan circuit area is less than 0.1% of the total area and it consumes less than 2% leakage power of the entire chip. In addition, we evaluate the tolerance of our methodology to background measurement noise and process variation.

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“…In order to characterize temperature changes on a submicron scale, classical methods like IR thermal imaging do not provide the necessary spatial resolution [3,4]. Instead, other methods have been developed, e.g.…”

Section: Introductionmentioning

confidence: 99%