High Speed 1.55 μm InAs/InGaAlAs/InP Quantum Dot Lasers

Gready, David; Eisenstein, G.; Ivanov, V.; Gilfert, C.; Schnabel, Florian; Rippien, Anna; Reithmaier, Johann Peter; Bornholdt, C.

doi:10.1109/lpt.2013.2287502

Cited by 38 publications

(19 citation statements)

References 14 publications

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“…Actually, by injecting carriers to the ES through optical pump, the carrier flow between the WL and QDs' states also grows and hence the WL carrier population reaches to its steady state point at higher speed similar to the ES and GS carriers. Furthermore, the output power of QD laser also would turn on during shorter delay time with increasing optical pump which is in confirmation with the previous results for modulation response [9].…”

Section: Resultssupporting

confidence: 91%

“…In fact, they are predicted to show superior characteristics which are profoundly attractive for high speed optical communications [2]- [8]. Although, recent experimental researches have demonstrated QD lasers with low threshold current at room temperature [3], high temperature stability [4]- [6], and low frequency chirping [7]- [8], the modulation response of QD lasers have shown damped relaxation oscillations with restricted bandwidth up to 10 GHz [9]- [11].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Modulation and Noise Characteristics in 1.55 µm QD Lasers using Additional Optical Pumping

Sanaee

Zarifkar

2017

IJOP

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ABSTRACT-The modulation response, relative intensity noise (RIN) and frequency noise (FN) characteristics of quantum dot (QD) lasers are investigated theoretically in the presence of an external optical beam. Using small signal analysis of the rate equations for carriers and photons, it is demonstrated that by injecting excess carriers into the QDs excited state through optical pumping, the modulation response of QD laser enhances and its bandwidth increases. The external optical pump also helps QD laser to turn on during shorter delay time. Further, it is deduced that the RIN level of QD laser reduces and the damping factor increases due to external beam. Moreover, the frequency noise level of QD laser and correspondingly its linewidth decreases by applying the optical beam.

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Enhanced Modulation and Noise Characteristics in 1.55 µm QD Lasers using Additional Optical Pumping

Sanaee

Zarifkar

2017

IJOP

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“…Directly modulated QD lasers are key components for fiber-based Datacom, MAN, and AN networks. The data rates reported for GaAs QD-lasers based on graded p-type doping emitting at 1.31 μm in the O-band and InP-based QD-lasers emitting at 1.55 μm in the C-band are beyond 25 Gbit/s [36,37] for large signal direct modulation in the non-return-to-zero (NRZ) on-off keying (OOK) scheme. Emission at QD excited states translates to larger differential gain and smaller nonlinear gain compression as compared to the ground state, being thus advantageous for many applications.…”

Section: High-frequency Directly Modulated Qd Lasersmentioning

confidence: 99%

“…Decoupling of gain and phase dynamics enables to operate QD-SOAs easily under phase modulation or at higher order modulation formats like DQPSK [19]. Operation including higher excited states enables additional enormous broadening of the bandwidth [36,37].…”

Section: Qd-based Semiconductor Optical Amplifiers and Wavelength Swimentioning

confidence: 99%

Semiconductor nanostructures for flying q-bits and green photonics

Bimberg

2018

Nanophotonics

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Breakthroughs in nanomaterials and nanoscience enable the development of novel photonic devices and systems ranging from the automotive sector, quantum cryptography to metropolitan area and access networks. Geometrical architecture presents a design parameter of device properties. Self-organization at surfaces in strained heterostructures drives the formation of quantum dots (QDs). Embedding QDs in photonic and electronic devices enables novel functionalities, advanced energy efficient communication, cyber security, or lighting systems. The recombination of excitons shows twofold degeneracy and Lorentzian broadening. The superposition of millions of excitonic recombinations from QDs in real devices leads to a Gaussian envelope. The material gain of QDs in lasers is orders of magnitude larger than that of bulk material and decoupled from the index of refraction, controlled by the properties of the carrier reservoir, thus enabling independent gain and index modulation. The threshold current density of QD lasers is lowest of all injection lasers, is less sensitive to defect generation, and does not depend on temperature below 80°C. QD lasers are hardly sensitive to back reflections and exhibit no filamentation. The recombination from single QDs inserted in light emitting diodes with current confining oxide apertures shows polarized single photons. Emission of ps pulses and date rates of 10 10 + bit upon direct modulation benefits from gain recovery within femtoseconds. Repetition rates of several 100 GHz were demonstrated upon mode-locking. Passively mode-locked QD lasers generate hat-like frequency combs, enabling Terabit data transmission. QD-based semiconductor optical amplifiers enable multi-wavelength amplification and switching and support multiple modulation formats.Keywords: quantum dot growth and electronic properties; quantum dot lasers; ultra-fast lasers and amplifiers; single q-bit emitters.

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“…Первая состоит в со-здании монолитных полупроводниковых гетероструктур с распределенными брэгговскими отражателями (РБО) на основе пары материалов GaAs/AlGaAs, с упругона-пряженными квантовыми ямами GaInAsN/GaAsN [1][2][3][4][5][6][7], GaInNAsSb/GaNAsSb [8][9][10][11][12] или квантовыми точками InAs/InGaAs [13][14][15][16][17][18][19]. Такие гетероструктуры выращи-ваются на подложках GaAs.…”

Section: Introductionunclassified

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

Бабичев¹,

Крыжановская²,

Моисеев³

et al. 2017

Физика И Техника Полупроводников

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Продемонстрирована возможность формирования гибридных метаморфных гетероструктур вертикально излучающих лазеров (ВИЛ) спектрального диапазона 1300 нм. Метаморфная полупроводниковая часть гетероструктуры с распределенным брэгговским отражателем на основе пары GaAs/AlGaAs и активной областью на основе квантовых ям InAlGaAs/InGaAs выращена методом молекулярно-пучковой эпитаксии на подложке GaAs(100). Верхнее диэлектрическое зеркало с распределенным брэгговским отражателем сформировано на основе пары SiO2/Ta2O5 методом магнетронного распыления. Проведено изучение спектров микрофотолюминесценции гетероструктур вертикально излучающих лазеров при комнатной температуре в диапазоне мощностей 0-70 мВт (длина волны оптической накачки составила 532 нм, диаметр сфокусированного пучка ~ 1 мкм). Наличие сверхлинейного хода зависимости интенсивности фотолюминесценции от мощности накачки наряду с заужением полуширины пиков фотолюминесценции и изменением модового состава могут быть обусловлены лазерной генерацией гетероструктуры вертикально излучающих лазеров. Полученные результаты свидетельствуют о возможности использования технологии метаморфного роста гетероструктур на подложках GaAs для создания вертикально излучающих лазеров спектрального диапазона 1300 нм. DOI: 10.21883/FTP.2017.09.44879.8557

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High Speed 1.55 μm InAs/InGaAlAs/InP Quantum Dot Lasers

Cited by 38 publications

References 14 publications

Enhanced Modulation and Noise Characteristics in 1.55 µm QD Lasers using Additional Optical Pumping

Enhanced Modulation and Noise Characteristics in 1.55 µm QD Lasers using Additional Optical Pumping

Semiconductor nanostructures for flying q-bits and green photonics

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

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