High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

Song, M. Y.; Lee, C. M.; Yang, Shan-Yi; Chen, G. L.; Chen, K. M.; Wang, I J.; Hsin, Yu-Chen; Chang, K. T.; Hsu, Chia-Kuei; Li, S. H.; Wei, Jeng−Hua; Lee, T. Y.; Chang, Meng-Fan; Bao, Xinyu; Diaz, C.H.; Lin, Shy-Jay

doi:10.1109/vlsitechnologyandcir46769.2022.9830149

Cited by 21 publications

(9 citation statements)

References 1 publication

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“…Refer to our previous publication for more detailed process information [14]. Figure 4a shows the typical tunneling magnetoresistance (TMR (%) = 100 × (R ap -R p ) / R p ) switched by external magnetic eld in y-direction (R-H curve).…”

Section: Device Characterizationmentioning

confidence: 99%

“…With the advent development of emerging non-volatile memory technology, such as Spin-Orbit Torque and Spin Transfer Torque Magnetic Random-Access Memory (SOT and STT-MRAM), Phase change memory (PCM) [3], Resistive Random-Access Memory (RRAM) [4], and Ferroelectric Random-Access Memory (Fe-RAM) [5,6], new computing architectures can be achieved for their non-volatility, low latency, low-power consumption, and integrability with CMOS [7][8][9][10][11][12][13]. Among the mentioned above memory technologies, SOT-MRAM offering a promising solution to replace Cache-level SRAM for its fast write speed and high energy e ciency and reliability [14][15][16]. Compared to STT-MRAM, SOT-MRAM harnesses the phenomenon of spin-orbit torque (SOT) generated from materials featured strong spin-orbit coupling (SOC) to switch the magnetization direction in nanomagnets of Magnetic Tunnel Junctions (MTJs).…”

Section: Introductionmentioning

confidence: 99%

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Manufacturable high-speed CMOS back-end-of-line-compatible spin-orbit-torque magnetic random-access memory with β-tungsten

Huang,

Song,

Lee

et al. 2024

Preprint

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The magnetization switching driven by spin-orbit torque (SOT) has garnered significant interest due to its potential for realizing Spin-Orbit Torque Magnetic Random-Access Memory (SOT-MRAM). This design features distinctly separated read and write paths, promising enhanced device reliability and a more favorable window for minimizing read/write interference. Among many explored heavy metals which possess strong spin-orbit coupling, tungsten stands out as a particularly intriguing material, exhibiting substantial spin–orbit torques in thin films stabilized in the A15 (β-phase) structure. However, challenges arise from the low spin Hall angles (~ 0.01) observed in the energetically favorable α-phase tungsten. Integration of β-W with modern CMOS processes, particularly under the back-end-of-line (BEOL) thermal budget (400℃ 30 mins), remains problematic. In this study, we report a design strategy for achieving BEOL thermal budget in tungsten layers, focusing on β-tungsten (β-W) as a promising material for efficient spin-orbit torques (SOTs) with a recorded high spin Hall conductivity of approximately 4500 Ω-1cm-1 measured by spin-torque ferromagnetic resonance (ST-FMR) and Harmonic Hall resistance. Finally, we demonstrate 1 ns SOT switching with 146% tunneling magnetoresistance based on the proposed β-W film stack. This comprehensive investigation provides a manufacturable and CMOS comparable path for next-generation low-power MRAM and spintronics.

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Section: Device Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Manufacturable high-speed CMOS back-end-of-line-compatible spin-orbit-torque magnetic random-access memory with β-tungsten

Huang,

Song,

Lee

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

“…Spin-orbit torque magnetic random-access memory (SOT-MRAM) is the front-runner of the next-generation reliable high-speed cache application due to its non-volatile, fast writing speed, low writing power, and high endurance. [1][2][3][4][5] Perpendicular magnetic tunnel junction, as the basic memory unit of SOT-MRAM, has been extensively studied owing to its scaling-down potential. 6) The annealing process is especially critical to achieving perpendicular magnetic anisotropy (PMA) of the SOT magnetic tunnel junctions (SOT-MTJ) thin film.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on the magneto-electric properties of SOT-MTJs from micro to nano-sized dimensions

Zhao

Gao

et al. 2023

Jpn. J. Appl. Phys.

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Spin-orbit torque magnetic random-access memory (SOT-MRAM) exhibits great potential to be next-generation memory. Annealing is an essential process for SOT magnetic tunnel junctions (SOT-MTJs) thin films. To optimize the SOT-MTJ thin films, studying the different dimensions from micro-size to nano-size is very necessary. Here, we investigate the annealing effect on magneto-electric properties of micro-scaled and nano-scaled SOT-MTJs. The tunnel magnetoresistance (TMR) and critical current density (Jc) increase after annealing attributing to the improved crystallization of CoFeB layers and perpendicular magnetic anisotropy (PMA), respectively. However, the TMR increment of micro-scaled SOT-MTJ is larger than that in nano-scale, due to the reduced defects of micro-scaled SOT-MTJs by annealing. Additionally, the Jc of nano-scaled SOT-MTJ is decuple for that of micro-scaled SOT-MTJ because of the improved PMA and diminished thermal effect. This work assesses the different annealing effect in micro- and nano-sized dimensions and supplies experiment foundation to optimize the performance of SOT-MTJs.

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“…Tohoku University showcased a 4 KB SOT-MRAM using canted in-plane MTJs [37] . TSMC, in collaboration with ITRI, also successfully delivered an 8 Kb SOT-MRAM array ("type-Y" devices) [38,39] . However, it is important to note that the SOT-MRAM is still in the research and development (R&D) phase worldwide.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

Jiang,

Li,

Zhang

et al. 2023

J. Semicond.

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We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX array exhibits an in-die function yield of over 99.6%. Additionally, it provides a sufficient readout window, with a TMR/R P_sigma% value of 21.4. Moreover, the SOT magnetic tunnel junctions (MTJs) in the array show write error rates as low as 10−6 without any ballooning effects or back-hopping behaviors, ensuring the write stability and reliability. This array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from −40 to 125 °C. Overall, the demonstrated array shows competitive specifications compared to the state-of-the-art works. Our work paves the way for the industrial-scale production of SOT-MRAM, moving this technology beyond R&D and towards widespread adoption.

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High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

Cited by 21 publications

References 1 publication

Manufacturable high-speed CMOS back-end-of-line-compatible spin-orbit-torque magnetic random-access memory with β-tungsten

Manufacturable high-speed CMOS back-end-of-line-compatible spin-orbit-torque magnetic random-access memory with β-tungsten

Annealing effect on the magneto-electric properties of SOT-MTJs from micro to nano-sized dimensions

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

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