High-Speed 850 nm Oxide-Confined Vertical Cavity Surface Emitting Lasers

Lear, K.L.; Hietala, V.M.; Hou, H.Q.; Banaś, J.; Hammons, B. E.; Zolper, J.C.; Kilcoyne, S.P.

doi:10.1364/ueo.1997.uc2

Cited by 10 publications

(4 citation statements)

References 3 publications

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“…The low bias current densities, such as 6.4 kA cm −2 necessary for the 15.3 GHz bandwidth in the 10 μm active diameter device, should improve reliability as higher current densities increase the VCSEL's internal temperature and accelerate device degradation [15][16][17]. Previously published VCSEL modulation bandwidths of 16.3 [23] and 15.2 GHz [24] for oxide-confined devices, 14.5 GHz for an implanted device [25], 21.5 GHz for an oxide-and implant-confined device [4] and 22 GHz for a tapered oxide aperture [26] required bias current densities of 50, 27.8, 22.2, 30 and 46 kA cm −2 , respectively. However, at these high current densities, the reliability of VCSELs is limited since the failure rate of VCSELs is proportional to the bias current density squared [18].…”

Section: Dynamics and Bandwidth Limitationsmentioning

confidence: 98%

“…The intrinsic bandwidths of VCSELs, as demonstrated by analyzing damping in CWdriven devices [4] or time domain relaxation oscillations in gain-switched lasers [5] were 58 GHz and 70 GHz, respectively. However, extrinsic factors including parasitic circuit elements, high junction temperatures and multimode operation have prevented VCSELs from reaching their intrinsic capabilities.…”

Section: Introductionmentioning

confidence: 99%

“…Many researchers have reported methods for reducing the parasitic circuit effects such as parasitic resistances and capacitances associated with VCSELs. Various approaches to reduce the VCSEL's series resistances (top and bottom mirrors) and capacitances (junction, oxide and pad) are reported in [3,4,[6][7][8]. Another factor that was observed to limit the maximum bandwidth of VCSELs is the number of transverse modes [9].…”

Section: Introductionmentioning

confidence: 99%

“…Another factor that was observed to limit the maximum bandwidth of VCSELs is the number of transverse modes [9]. Higher modulation bandwidth was obtained from devices that operated in a single mode for an extended range above threshold [4]. While there are many interrelated factors that may contribute to single-mode operation such as current distribution, gain-mode overlap, spatial hole burning and the optical loss of higher order modes, one of the essential VCSEL fabrication parameters that can promote signal-mode operation is oxide aperture diameter, that is, making the active diameter small enough to allow only single-mode operation.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers

Al-Omari¹,

AL-Kofahi²,

Lear³

2009

Semicond. Sci. Technol.

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High-speed, oxide-confined, polyimide-planarized 850 nm vertical-cavity surface emitting lasers (VCSELs) with different aperture sizes were fabricated and characterized. Comprehensive small signal measurements and analysis were conducted. The VCSELs exhibit intrinsic, parasitic and thermal maximum bandwidth limitations of 42.3 GHz, 21.5 GHz and 17.6 GHz, respectively. Devices with a 10 μm oxide aperture exhibited a maximum modulation bandwidth of 15.3 GHz, limited by thermal effects, and a modulation current efficiency factor (MCEF) of 9.2 GHz mA −1/2. A VCSEL equivalent circuit model which incorporates the frequency dependence of the polyimide dielectric permittivity and loss is presented. A genetic algorithm (GA) was utilized to extract the parasitic circuit elements from measured microwave reflection coefficients (S 11) over a frequency range of 50 MHz to 20 GHz for different device sizes at different bias currents. Good agreement between extracted and calculated parasitic circuit element values was obtained. Several modifications to the device's fabrication steps and structure are suggested to further improve the device's output power and modulation bandwidth.

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Section: Dynamics and Bandwidth Limitationsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers

Al-Omari¹,

AL-Kofahi²,

Lear³

2009

Semicond. Sci. Technol.

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High Speed 850 nm VCSEL Results

Mutig

2011

Springer Theses

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VCSEL Fundamentals

Michalzik

2012

Springer Series in Optical Sciences

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In this chapter we outline major principles of vertical-cavity surfaceemitting laser (VCSEL) design and operation. Basic device properties and generally applicable cavity design rules are introduced. Characteristic parameters like threshold gain and current, differential quantum efficiency and power conversion efficiency, as well as thermal resistance are discussed. We describe the design of Bragg reflectors and explain the transfer matrix method as a convenient tool to compute VCSEL resonator properties in a one-dimensional approximation. Experimental results illustrate the emission characteristics of high-efficiency VCSELs that apply selective oxidation for current and photon confinement. Both the 850 and 980 nm wavelength regions are considered. The basic treatment of laser dynamics and noise behavior is presented in terms of the small-signal modulation response as well as the relative intensity noise. Finally we give some examples of VCSEL applications in fiber-based optical interconnects, i.e., optical data transmission over short distances. IntroductionVCSELs have undergone an extraordinary evolution over the past three decades. Suggested by Prof. Kenichi Iga and first demonstrated by the research group at Tokyo Institute of Technology in the late 1970s [1-3], VCSELs are a commodity item today [4] and already serve millions of computer users as the key component in modern navigation devices such as the optical mouse. In even larger quantity, this laser type has entirely replaced edge-emitting laser diodes for use in multimode fiber-based Gbit/s speed optical data transmission in premises networks and for the interconnection of various kinds of computer clusters. Several books entirely devoted R. Michalzik (B)

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High-Speed 850 nm Oxide-Confined Vertical Cavity Surface Emitting Lasers

Cited by 10 publications

References 3 publications

Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers

Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers

High Speed 850 nm VCSEL Results

VCSEL Fundamentals

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