High speed A/D converter using resonant tunneling diodes

Wei, S.-J.; Lin, Hongchin; Potter, Robert D.; Shupe, D.

doi:10.1109/iscas.1992.230126

Cited by 9 publications

(1 citation statement)

References 6 publications

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“…Resonant-tunnelling diodes are of interest for use in multistate and compact memory [19][20][21][22][23][24][25][26][27][28], multivalued and self-latching logic [6,19,[29][30][31][32][33][34][35][36][37][38][39][40], pulse generation [7,[41][42][43][44], analogue-to-digital conversion [45][46][47][48][49][50][51][52], shift registers [6,53,54], oscillator elements [55][56][57], frequency multiplication [58][59][60], low-noise amplification [61,62], neural networks [63], and fuzzy logic …”

Section: Introductionmentioning

confidence: 99%

Tunnelling-based SRAM

Wagt

1999

Nanotechnology

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This paper describes the use of low-current-density tunnelling devices to obtain dense low-power (sub-100 nW/bit) compound semiconductor static random access memory (SRAM); this cell power is over two orders of magnitude lower than the best previously demonstrated in III-V materials. This same circuit topology promises orders of magnitude reduction in static power dissipation for silicon memories, assuming a suitable Si-based negative differential resistance device, at sub-pA current levels, is developed. The concept of low-standby-power tunnelling-based SRAM (TSRAM) is presented in the context of a scaling theory for all memories and a comparison is given across technologies. Experimental results for a 50 nW TSRAM gain cell using ultralow current density (~1 A cm-2) resonant tunnelling diodes and low-leakage heterostructure field-effect transistors are discussed. We describe a one-transistor TSRAM cell, verify its operation, and discuss merits of TSRAM relative to other memory types. Silicon TSRAM standby power is projected to be lower than that of conventional-style silicon SRAM or DRAM.

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