High Speed Chalcogenide Random Access Memory Based on Si₂Sb₂Te₅

Abstract

An approach to creating the highest-order multiple-quantum coherences is developed. The method is based on using the multiple-quantum NMR technique and various initial conditions and can be considered as supplemental to earlier developed methods. Using the dipolar ordered state as the initial one, it is demonstrated that in a cluster of four and eight dipolar-coupled nuclear spins the highest-order multiple-quantum coherences can be created.

Thermally induced phase separation of Si–Sb–Te alloy

“…However, this material seems to be an exception. As previously reported [5], it has demonstrated good electrical properties in comparison to those of Ge 2 Sb 2 Te 5 , and it satisfies the requirement for RAM applications. In particular, the average threshold current (I th ) of Si 2 Sb 2 Te 5 is much smaller than that of Ge 2 Sb 2 Te 5 , and a high cycling life time is obtained without an obvious decline in the electrical properties [5].…”

“…Over the past several years, the Ge 2 Sb 2 Te 5 alloy has been a leading candidate for C-RAM due to its excellent thermal stability and electrical performance [3,4]. To reduce the cost (Si vs. Ge) and to produce low energy usage and good data retention in C-RAM applications as compared to the Ge 2 Sb 2 Te 5 alloy, the Si 2 Sb 2 Te 5 alloy was developed as a new type of phase change material to imitate the outstanding Ge 2 Sb 2 Te 5 [5][6][7]. As a competing alloy and a new C-RAM material, Si 2 Sb 2 Te 5 has been reported to exhibit better data retention and a lower threshold current in comparison to Ge 2 Sb 2 Te 5 [5].…”

“…To reduce the cost (Si vs. Ge) and to produce low energy usage and good data retention in C-RAM applications as compared to the Ge 2 Sb 2 Te 5 alloy, the Si 2 Sb 2 Te 5 alloy was developed as a new type of phase change material to imitate the outstanding Ge 2 Sb 2 Te 5 [5][6][7]. As a competing alloy and a new C-RAM material, Si 2 Sb 2 Te 5 has been reported to exhibit better data retention and a lower threshold current in comparison to Ge 2 Sb 2 Te 5 [5]. Furthermore, an endurance of up to 10 6 cycles with a resistance ratio of 100 has been achieved [5].…”

“…As a competing alloy and a new C-RAM material, Si 2 Sb 2 Te 5 has been reported to exhibit better data retention and a lower threshold current in comparison to Ge 2 Sb 2 Te 5 [5]. Furthermore, an endurance of up to 10 6 cycles with a resistance ratio of 100 has been achieved [5]. However, the causes for such outstanding behaviors have not been elucidated, although it has been suggested that a phase transition process similar to that of Ge 2 Sb 2 Te 5 could occur [7].…”

Experimental and theoretical investigations on effects of hydrostatic pressure on the electrical properties of rhombohedral Sb2Te3

“…Sb 2 Te 3 exhibits the growth-dominated crystallization process and the set operation speed is faster than that of Ge 2 Sb 2 Te 5 in which the crystallization process is nucleation dominated. [7][8][9] Several studies [10][11][12][13] have been performed to date the phase transformation achieved within nanosecond between the amorphous phase and crystalline phase.…”