High-speed digital family using field effect diode

A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

“…Among proposed alternative structures, modified Field Effect diode is introduced for high-performance and low-power applications [1,2,3,4,5,6,7,8].…”

“…Electric fields created by gates induce carriers inside the channel region. By applying different voltage polarities to the gates, separated regions of electrons or holes are created [4,5,7]. These gates can be biased such that either a p-n or n-p channel replaces the lightly doped or intrinsic region between the source and the drain.…”

“…These gates can be biased such that either a p-n or n-p channel replaces the lightly doped or intrinsic region between the source and the drain. When a voltage is applied from the source to the drain, the channel is either turned on or off based on the voltage polarities of the gates [7].…”

“…The nanoscale Field Effect Diode is considered one of the most promising structure to suppress the short channel effects for a given equivalent gate oxide thickness by using multiple gates to control the channel [1,2,3,4,5,6,7,8].…”

Memory cell using Modified Field Effect Diode

“…It has two gates over its channel and the source and drain doping profiles are different from that of a MOSFET. This structure provides orders of magnitude larger current and I on /I off ratio, compared to a regular MOSFET and also does not suffer from short channel effects [1,2,3] both of which are attributed to the fact that pinch-off does not occur in M-FED.…”