2023
DOI: 10.35848/1882-0786/accc0c
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High-speed etching of gallium nitride substrate using hydrogen-contained atmospheric-pressure plasma

Abstract: Atmospheric-pressure plasma etching of gallium nitride (GaN) substrate using hydrogen radicals instead of chlorine radicals was investigated toward the backside thinning of GaN vertical power devices to reduce on-resistance. As a basic experiment, a pipe-shaped electrode was placed facing the GaN substrate to generate atmospheric-pressure plasma of a gas mixture of helium and hydrogen, and high-speed etching of approximately 4 μm/min was achieved. Although many spherical Ga metal particles were observed on the… Show more

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