High speed evanescently coupled
            <i>PIN</i>
            photodiodesfor hybridisation on siliconplatform optimised with genetic algorithm

Giraudet, L.; Harari, J.; Magnin, Vincent; Pagnod, P.; Boucherez, E.; Décobert, J.; Bonnet-Gamard, J.; Carpentier, D.; Jany, Clement; Blache, F.; Decoster, D.

doi:10.1049/el:20010664

Cited by 8 publications

(7 citation statements)

References 6 publications

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“…In our case, because the active area is 50 200 m , and the absorbing layer thickness is 2 m, the cutoff frequency related to capacitance effect is 5.5 GHz whereas that related to transit time limitation is 14.8 GHz [1]. Consequently, the resulting device cutoff frequency is close to 5 GHz [43], dominated by capacitance effect. The performances obtained are of high level as summarized in Table IV; is the responsibility and is the vertical alignment tolerance.…”

Section: Discussionmentioning

confidence: 81%

Design, optimization, and fabrication of side-illuminated p-i-n photodetectors with high responsivity and high alignment tolerance for 1.3and 1.55-μm wavelength use

Magnin

Giraudet²,

Harari

et al. 2002

J. Lightwave Technol.

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In this paper, we describe the design, optimization and fabrication of side-illuminated p-in photodetectors, grown on InP substrate, suitable for surface hybrid integration in low-cost modules. The targeted functionalities of these photodetectors were a very high responsivity at 1.3-and 1.55-m wavelengths and quasi-independent on the optical polarization, and had a high alignment tolerance. Moreover, in order to avoid any reliability problem, the principle of evanescent coupling was adopted. Two photodetectors were optimized, fabricated, and tested; the first was for classical cleaved fiber, and the second was for lensed fiber. Because the considered epitaxial structures were complicated to optimize, the method of the genetic algorithm was used, associated with a beam propagation method (BPM). The photodetectors are based on multimode diluted waveguides, which are promising structures in the field of optoelectronics and integrated optics. Starting from the presented comparisons between experimental and theoretical results, the interest of the design method is discussed and the complete performances of newly fabricated devices are presented. The aspect of the cutoff frequency is also considered.

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Section: Discussionmentioning

confidence: 81%

Design, optimization, and fabrication of side-illuminated p-i-n photodetectors with high responsivity and high alignment tolerance for 1.3and 1.55-μm wavelength use

Magnin

Giraudet²,

Harari

et al. 2002

J. Lightwave Technol.

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“…wafers. 18,19 Reactor pressure was 50 Torr and growth temperature was 650°C. Trimethylaluminium ͑TMAl͒, trimethylgallium ͑TMGa͒, trimethylindium ͑TMIn͒, arsine (AsH 3 ) and phosphine (PH 3 ) were used as gas sources.…”

Section: Methodsmentioning

confidence: 99%

Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy

Décobert¹,

Patriarche

2002

Journal of Applied Physics

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InP/InGaAs and InGaAs/InP interfaces in heterostructures grown by metalorganic vapor-phase epitaxy (MOVPE) have been studied by transmission electron microscopy (TEM). Cross-sectional TEM 002 dark field images of the direct (InP–InGaAs) and inverted (InGaAs–InP) interfaces revealed a great difference in abruptness. Whereas the direct interface is always well defined and flat, the inverted one is compositionally graded and shows surface undulations. InP–InGaAs heterostructures were studied for different layer thicknesses and phosphine flow rates. The results indicate that this effect originates more from the substitution of arsenic by phosphorus atoms in subsurface InGaAs monolayers rather than from As carryover to the InP layer. The strong As–P exchange observed over several InGaAs monolayers is related to the large difference in chemical bond strength between Ga–As and Ga–P. This is supported by comparison with InP/InAlAs/InP and InP/In1−xGaxAsyP1−y/InP (0.1<x<0.4) heterostructures. The inverted InAlAs/InP interface is much more abrupt than the InGaAs/InP one and does not show any surface undulations. Furthermore, the In1−xGaxAsyP1−y/InP interface surface undulations increase with x composition. These results, valid for our experimental configuration, indicate that MOVPE grown InGaAs/InP interfaces can be improved by using very low hydride flow during the switching sequence.

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“…A basic structure using two guiding layers is first studied. Then it is shown that a multimode diluted waveguide [8,9] could improve the performances of that kind of device. The resulting component is suitable for hybridisation on a silicon platform [8].…”

Section: Introductionmentioning

confidence: 99%

Numerical study of polarisation-selective side-illuminated pin photodetectors grown on InP substrate for hybridisation on silicon platform

Magnin

Harari

Decoster

2004

IEE Proceedings - Optoelectronics

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A monolithic polarisation-selective side-illuminated pin photodetector is described using the coupling properties of symmetric and asymmetric slab optical waveguides. First, a basic structure is proposed, analysed and optimised by modal analysis, leading to a computed polarisation ratio of 15.7 dB. Then the symmetric waveguide is replaced by a multimode diluted waveguide optimised by a genetic algorithm coupled to a beam propagation method. This significantly improves the performance of the device and particularly the computed polarisation ratio, which reaches 21 dB. This InP-based photodetector is suitable for hybridisation on a silicon platform and is compatible with 10 Gbit/s operation.

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High speed evanescently coupled PIN photodiodesfor hybridisation on siliconplatform optimised with genetic algorithm

Cited by 8 publications

References 6 publications

Design, optimization, and fabrication of side-illuminated p-i-n photodetectors with high responsivity and high alignment tolerance for 1.3and 1.55-μm wavelength use

Design, optimization, and fabrication of side-illuminated p-i-n photodetectors with high responsivity and high alignment tolerance for 1.3and 1.55-μm wavelength use

Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy

Numerical study of polarisation-selective side-illuminated pin photodetectors grown on InP substrate for hybridisation on silicon platform

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