High-Speed Fabry–Pérot Optical Modulator in Silicon With 3-μm Diode

Meister, Stefan; Rhee, H.; Al-Saadi, Aws; Franke, Bülent A.; Kupijai, Sebastian; Theiss, Christoph; Eichler, Hans Joachim; Stolarek, David; Richter, H.; Zimmermann, Lars; Tillack, Bernd; Lesny, Mateusz; Meuer, C.; Schubert, C.; Woggon, U.

doi:10.1109/jlt.2015.2390077

Cited by 8 publications

(4 citation statements)

References 9 publications

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“…21,49,61 Phase modulation is translated into intensity modulation by embedding the phase modulator into MZIs, [15][16][17]77,79,108,109 RRs, 18,32,33,62,110,111,119 Bragg reflectors, 88 Michelson interferometers, 8,121 photonic crystal cavities, 98,[112][113][114] and Fabry-Perot cavities. 100 The three prominent schemes to introduce change in the free carrier concentration are (a) the injection of minority carriers 7,37,61-67 by forward biasing a PIN junction; (b) the accumulation of majority carriers 12,68,69,69,70 of opposing polarity across an insulating section in a waveguide; (c) the depletion of majority carriers 9,13,14,16,22,32,33,71,71-87 from a PN junction by reversely biasing it.…”

Section: High-speed Modulators Using the Plasma Dispersion Effectmentioning

confidence: 99%

“…26,55,56,124,125,129 Nevertheless, R&D efforts have resulted in the performance of SiPh plasma dispersion modulators that is comparable with other photonic integration technologies. 27 Typically, plasma dispersion modulators rely on interferometric structures [such as the Mach-Zehnder interferometer (MZI) 13,19,78,84,108,118 or optical cavities 9,12,32,33,100,115 ] for the translation of phase modulation into amplitude modulation. The carrier depletion-based interferometric plasma dispersion modulators, such as MZMs, are large in size (typically a phase shifter length of a few mm).…”

Section: Introductionmentioning

confidence: 99%

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Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.

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Section: High-speed Modulators Using the Plasma Dispersion Effectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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“…Optical microcavities with exceptional quality factor (Q) to mode volume (V) ratios (Q/V) have attracted particular interest, because of their strong ability to confine optical mode [33], [34]. Numerous EOMs based on optical microcavities have been proposed successively in recent years: microdisk cavities [14], [15], racetrack cavities [16], ring cavities [17], [18], Fabry-Pérot (F-P) cavities [19], [20], and photonic crystal (PhC) cavities [21]- [32]. Among these, PhC cavity-based EOMs, including 2D PhC cavities [21]- [24], and 1D PhC cavities [25]- [32], have emerged as promising platforms for low power and high efficiency operation due to their ultrahigh Q/V and compact size.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Low Index-Contrast Polymeric Photonic Crystal Nanobeam Electro-Optic Modulator

Liu

Qin

et al. 2020

IEEE Photonics J.

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A novel nanocavity-based polymer-on-insulator (POI) electro-optic modulator (EOM) is proposed. It consists of a polymeric photonic-crystal nanobeam cavity (PCNC) with ultra-low index-contrast (n cavity /n bg = 1.17). Based on three-dimensional (3D) finitedifference time-domain (FDTD) method, the PCNC design and optimization are investigated theoretically. A high quality-factor (Q) of 3.4 × 10 4 and small mode-volume of 22.8 (λ/n SE O ) 3 can be achieved. In order to judge the efficiency of the cavity design for electro-optic (EO) modulation, the optical modes and the electric field distribution are computed using an electromagnetic finite-element solver. Benefiting from the fast and strong EO effect in polymers, the modulator shows an EO modulation efficiency of up to 16 pm/V, which is over an order of magnitude higher than that in lithium niobate (LN) PCNCs. Moreover, the device is only 80 μm in length, leading to a voltage-length product V π × L = 0.05 V•cm, which is much smaller than those of Mach-Zehnder modulators. To the best of our knowledge, this is the first on-chip POI-based EOM that features both ultra-compact size and high modulation efficiency. Hence, it is potentially an ideal platform for applications in optical communications, electric-field sensing, and tunable photonic circuits.

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“…Traditionally losses have been a major drawback, however, recent developments have largely overcome this issue [11,12] and have enabled a ten times reduction in length [13]. Photonic Crystal cavities based modulators take this to the extreme, providing large reductions in footprint and power consumption relative to ring resonators [14,15], see Figure 1. But the resonant nature of such a modulator makes it intrinsically wavelength selective, creating matching issues between it and the external laser which requires the use of tuning elements and control circuitry [16].…”

Section: Introductionmentioning

confidence: 99%

Hybrid photonic crystal lasers

Liles

Bakoz²,

Gonzalez

et al. 2016

2016 18th International Conference on Transparent Optical Networks (ICTON)

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Access to the full text of the published version may require a subscription. Rights ABSTRACTEnergy efficient Wavelength Division Multiplexing (WDM) is the key to satisfying the future bandwidth requirements of datacentres. As the silicon photonics platform is regarded the only technology able to meet the required power and cost efficiency levels, the development of silicon photonics compatible narrow linewidth lasers is now crucial. We discuss the requirements for such laser systems and report the experimental demonstration of a compact uncooled external-cavity mWatt-class laser architecture with a tunable Si Photonic Crystal resonant reflector, suitable for direct Frequency Modulation.

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High-Speed Fabry–Pérot Optical Modulator in Silicon With 3-μm Diode

Cited by 8 publications

References 9 publications

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

Ultra-Low Index-Contrast Polymeric Photonic Crystal Nanobeam Electro-Optic Modulator

Hybrid photonic crystal lasers

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