High-Speed High-Efficiency Photon-Trapping Broadband Silicon PIN Photodiodes for Short-Reach Optical Interconnects in Data Centers

Ghandiparsi, Soroush; Devine, Ekaterina Ponizovskaya; Yamada, Toshio; Wang, Shih-Yuan; Islam, M. Saif; Elrefaie, Aly F.; Mayet, Ahmed S.; Landolsi, Taha; Bartolo-Perez, Cesar; Cansizoglu, Hilal; Gao, Yang; Mamtaz, Hasina H.; Golgir, Hossein Rabiee

doi:10.1109/jlt.2019.2937906

Cited by 24 publications

(17 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 24–27 ] By introducing such PT structures on the surface, the reflection of light is reduced, and the optical path length is increased, enhancing the photon absorption and allowing the use of thinner semiconductor layers for faster carrier collection. [ 1,28 ] Using this approach, ultrafast and highly sensitive PDs have been demonstrated by several groups both for short [ 24,25,29–31 ] and longer wavelengths. [ 26,32–35 ] However, due to the different degrees of freedom for design and fabrication, the implementation of PT structures in PDs remains a challenge.…”

Section: Introductionmentioning

confidence: 99%

Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Bartolo-Perez

Qarony

Ghandiparsi

et al. 2021

Advanced Photonics Research

Self Cite

View full text Add to dashboard Cite

Silicon photodetectors (PDs) operating at near‐IR wavelengths with high speed and high sensitivity are becoming critical for emerging applications, such as light detection and ranging (LIDAR) systems, quantum communications, and medical imaging. However, such PDs present a bandwidth‐absorption trade‐off at those wavelengths that have limited their implementation. Photon‐trapping (PT) structures address this trade‐off by enhancing the light–matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. Herein, strategies to improve the PT effect while enhancing the speed of operation are investigated. By optimizing the design of PT structures and experimentally integrating them in high‐speed PDs, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% are achieved. Empirical equations correlate the quantum efficiency of PDs with the physical properties of the PT structures, material characteristics, and limitations of the fabrication technologies. The results that are obtained open routes toward designing cost‐effective complementary metal–oxide‐semiconductor (CMOS)‐integrated receivers.

show abstract

Section: Introductionmentioning

confidence: 99%

Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Bartolo-Perez

Qarony

Ghandiparsi

et al. 2021

Advanced Photonics Research

Self Cite

View full text Add to dashboard Cite

show abstract

“…The capacitance of P/N-junctions increases proportional to the photodiode area and it is inversely proportional to the width of the space-charge region W [6]. A thin silicon-on-insulator (SOI) layer and non-standard processing for hole patterning to increase the responsivity were used for a 12.5 Gb/s 30-µm photodiode with a capacitance of 60 fF at 15 V, where W was 1.4 µm [7]. A thick low-doped absorption region, however, leads to a large W and can provide a low capacitance of a PIN photodiode.…”

Section: Introductionmentioning

confidence: 99%

Dot PIN Photodiodes With a Capacitance Down to 1.14 aF/μm²

Goll

Schneider-Hornstein

Zimmermann

2023

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

PIN photodiodes with small half-spherical cathodes are investigated. They combine a large light-sensitive area with a very small capacitance. Dot photodiodes without and with shallow-trench isolation are compared. Also, the influence of an optical window on the responsivity is examined. The dot photodiodes were fabricated in 0.18 µm high-voltage CMOS without needing process changes. Capacitances down to 0.8 fF are achieved at a light-sensitive area of 706.9 µm 2 . Responsivities in the range of 0.35 A/W to 0.4 A/W were observed for a wavelength of 635 nm. The −3dB cut-off frequencies for 675 nm light reach up to 300 MHz for reverse voltages up to 30 V. The rise and fall times reduce to about 0.8 ns and 1.0 ns, respectively, also at 30 V reverse bias.

show abstract

“…To increase the absorption and hence the responsivity of low-absorbance devices, miscellaneous structures have been incorporated into photodetertors [ 5 ]. Plasmonic metasurfaces [ 6 , 7 , 8 , 9 ] and photon-trapping structures [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ] have been demonstrated to be effective in reinforcement of photoresponses. The disadvantages of metallic metasurfaces that allow conversion of the incident electromagnetic radiation into the surface plasmons are high ohmic losses in the metal [ 18 ] and a small penetration depth of the plasmon field to the semiconductor, particularly for short wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

et al. 2022

View full text Add to dashboard Cite

Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QDs is the small absorbance of infrared radiation due to the low density of the states coupled to the dots. In this paper, we report on the Ge/Si QD pin photodiodes integrated with photon-trapping hole array structures of various thicknesses. The aim of this study was to search for the hole array thickness that provided the maximum optical response of the light-trapping Ge/Si QD detectors. With this purpose, the embedded hole arrays were etched to different depths ranging from 100 to 550 nm. By micropatterning Ge/Si QD photodiodes, we were able to redirect normal incident light laterally along the plane of the dots, therefore facilitating the optical conversion of the near-infrared photodetectors due to elongation of the effective absorption length. Compared with the conventional flat photodetector, the responsivity of all microstructured devices had a polarization-independent improvement in the 1.0–1.8-μm wavelength range. The maximum photocurrent enhancement factor (≈50× at 1.7 μm) was achieved when the thickness of the photon-trapping structure reached the depth of the buried QD layers.

show abstract

High-Speed High-Efficiency Photon-Trapping Broadband Silicon PIN Photodiodes for Short-Reach Optical Interconnects in Data Centers

Cited by 24 publications

References 19 publications

Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Dot PIN Photodiodes With a Capacitance Down to 1.14 aF/μm²

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

Contact Info

Product

Resources

About

High-Speed High-Efficiency Photon-Trapping Broadband Silicon PIN Photodiodes for Short-Reach Optical Interconnects in Data Centers

Cited by 24 publications

References 19 publications

Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Dot PIN Photodiodes With a Capacitance Down to 1.14 aF/μm2

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

Contact Info

Product

Resources

About

Dot PIN Photodiodes With a Capacitance Down to 1.14 aF/μm²