High-speed, high-responsivity, and high-power performance of near-ballistic uni-traveling-carrier photodiode at 1.55-/spl mu/m wavelength

Shi, Jin‐Wei; Wu, Yelin; Wu, Chang Yu; Chiu, Pei-Chin; Hong, Chao‐Chi

doi:10.1109/lpt.2005.853296

Cited by 90 publications

(33 citation statements)

References 13 publications

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“…However, during photodiode operation, photogenerated holes with slow drift velocity are always a major factor limiting speed. The 'slow' hole problem is eliminated in the InP-based UTC photodiode structure [ Normalized to spiral antenna output UTC (NBUTC) photodiodes [56][57][58][72][73][74], where only electrons with high drift velocity act as active carriers. Figure 6 shows conceptual band diagrams for p-i-n, UTC and NBUTC photodiodes.…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

“…This leads to a significant improvement in the effective carrier drift velocity of the photodiode during operation and excellent SCBP performance [28,70,71]. The major difference between the UTC photodiode and the NBUTC photodiode is the insertion of an additional p-type charge layer in the collector layer to control the distribution of the internal electrical field, which results in an over-shoot of the electron drift velocity even under high reverse bias voltage (-3 V) [56][57][58][71][72][73][74]. Figure 6(c) shows a conceptual band diagram for an NBUTC photodiode.…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

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Millimeter-wave photonic wireless links for very high data rate communication

2011

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T he most useful wireless communication band is located in the frequency range of 0.3-3.5 GHz for reasons of compact antenna size, low propagation loss and good penetration through buildings [1]. However, wireless carrier frequencies are being pushed higher due to emerging high-bandwidth applications, which include next-generation smart cell phones [1] and wireless linking for three-dimensional super high-definition television [2]. As a result, the millimeter-wave (MMW) bands at 60 (V-band), 120 (D-band) and even higher than 300 GHz are beginning to attract attention due to their 'unlicensed' usage [2][3][4][5][6][7][8].Several key front-end components have been developed employing the already mature silicon-based complementary metal-oxide-semiconductor (CMOS) integrated-circuit (IC) technology for wireless communication in the V (50-75 GHz) and W (75-110 GHz) bands or even higher operating frequencies for wireless communication [9]. Recently, a 60 GHz CMOS transceiver module [10] and system comprised of antennas, 60 GHz power amplifiers, local oscillators and baseband ICs has been commercially developed by SiBEAM (USA). In addition, advanced InP-based high electron mobility transistors (InP-HEMTs) and heterojunction bipolar transistors have been used to develop some high-speed ICs and key components that operate at 125 GHz [11,12] or greater than 300 GHz [13,14] for >1 Gbit s -1 wireless communication systems.However, MMW signals suffer substantial propagation loss in free space [8]. This problem and their inherent straight-line path of propagation affect connections and synchronization between the different parts of the whole communication system [15]. A promising solution to overcome this problem is the radio-over-fiber (RoF) technique [3,4,16,17], in which the MMW local-oscillator signal and data are both distributed through a low-loss optical fiber and only radiated over the last mile to the end user. Figure 1 shows a schematic representation of this approach, illustrating the motivation and working principles of two MMW-over-fiber communication systems. Figure 1(a) shows the additional electrical-to-optical (E-O) and optical-to-electrical (O-E) conversion processes used in the central office and base station, respectively. The optical MMW signal is distributed remotely through a low-loss fiber from the central office to several base stations, effectively eliminating the huge propagation loss of the MMW signal that occurs in an electrical transmission line or free space.

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Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

Millimeter-wave photonic wireless links for very high data rate communication

2011

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“…To decrease the electron traveling time in the absorption layer, the introduction of a quasi-field into the absorption layer by means of the band-gap grading and/or doping grading are effective (Ishibashi et al, 1997. For decreasing the electron traveling time in the collection layer, p-type doping or cliff-like structure (Shi et al, 2005) are suitable for optimizing the electric field profile. On the other hand, to increase the saturation current level, increased ntype doping in the collection layer , Li et al, 2004) is preferable.…”

Section: Basic Characteristicsmentioning

confidence: 99%

High-Power RF Uni-Traveling-Carrier Photodiodes (UTC-PDs) and Their Applications

Nagatsuma¹,

Itô²

2011

Advances in Photodiodes

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“…13b,d,e, the i-InP carrier collection layer can be replaced with a dopedInP in order to avoid the space charge effect, and to accelerate electrons by near-ballistic (NB) transport behavior [60,61]. The former is sometimes called as chargecompensated (CC) structure [62].…”

Section: Carrier Transport Designmentioning

confidence: 99%

High‐power RF photodiodes and their applications

Nagatsuma

Itô

Ishibashi

2009

Laser & Photonics Reviews

155

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There has been an increasing interest in photonic generation of RF signals in the millimeter-wave (30 GHz ∼ 300 GHz) and/or terahertz-wave (0.1 THz ∼ 10 THz) regions, and photodiodes play a key role in it. This paper reviews recent progress in the high-power RF photodiodes such as UniTraveling-Carrier-Photodiodes (UTC-PDs), which operate at these frequencies. Several approaches to increasing both the bandwidth and output power of photodiodes are discussed, and promising applications to broadband wireless communications and spectroscopic sensing are described.Photodiode chip is bonded to the substrate with the antenna. This is a symbolic figure of RF photonics in this article. Antenna Photodiode Light RF signal

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High-speed, high-responsivity, and high-power performance of near-ballistic uni-traveling-carrier photodiode at 1.55-/spl mu/m wavelength

Cited by 90 publications

References 13 publications

Millimeter-wave photonic wireless links for very high data rate communication

Millimeter-wave photonic wireless links for very high data rate communication

High-Power RF Uni-Traveling-Carrier Photodiodes (UTC-PDs) and Their Applications

High‐power RF photodiodes and their applications

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