High-Speed Lasers

Nagarajan, Radhakrishnan; Bowers, John E.

doi:10.1016/b978-012397630-7/50003-2

Cited by 10 publications

(4 citation statements)

References 197 publications

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“…Advanced RWG designs demonstrate high output power in continuous wave (CW) from single mode Fabry-Perot (FP) and distributed-feedback (DFB) lasers [1,2,3]. An additional advantage of the RWG device design is the absence of the capacitance associated with blocking layers, providing the potential for ultra high-speed operation [4] and direct modulation of such lasers. Operation in the pulsed regime demonstrates the potential of RWG lasers, and with the data in Figure 1, we show that a peak power >2 W at 1550 nm can be reached in a FP RWG laser diode.…”

Section: Introductionmentioning

confidence: 99%

High-power single-mode InGaAsP/InP laser diodes for pulsed operation

et al. 2012

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We present high power, high reliability, single mode ridge waveguide laser diodes operated in an external cavity configuration. The cavity is formed by installing an InGaAsP/InP laser chip into a cavity with a Bragg grating mirror (BGM). The laser has fiber optical output. The devices are characterized by narrow spectral width operation, in pulsed and CW modes. We obtained 1.7 W output power in single mode fiber at 2 -10 ns pulses, at a 1550 nm wavelength, with an optical line width of 0.15 nm. For CW excitation, the devices emitted 200 mW optical power with a bandwidth of less than 0.01 nm. These devices exhibit high temperature stability of the laser line spectral position. The construction of these devices enables cost-efficient, narrow bandwidth lasers in the wavelength range from 1300 to 1900 nm.Keywords: high power, single mode laser, external cavity, narrow spectral line, ridge waveguide laser diode.

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Section: Introductionmentioning

confidence: 99%

High-power single-mode InGaAsP/InP laser diodes for pulsed operation

et al. 2012

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“…With spontaneous emission being the fundamental source of noise for both intensity and phase noise, they are correlated. RIN is expected to be directly proportional to the linewidth, but also frequency dependent due to the restoring force on the carrier density causing relaxation oscillations [24]:…”

Section: Discussionmentioning

confidence: 99%

Noise Performance of Single-Mode VCSELs: Dependence on Current Confinement and Optical Loss

Simpanen

Gustavsson

Debernardi

et al. 2020

IEEE J. Quantum Electron.

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We investigate the intensity and phase noise properties of GaAs-based 1060 nm oxide-confined single-mode vertical-cavity surface-emitting lasers (VCSELs) and their dependence on slope efficiency and current spreading, parameters that control the achievable output power. We find strong dependence of the linewidth on slope efficiency because it affects the optical resonator loss and therefore the spontaneous emission rate and the photon density. Likewise, we find strong dependence of the relative intensity noise on the slope efficiency since the optical resonator loss controls the photon lifetime, and therefore the damping of the relaxation oscillations. There is no noticeable dependence on transverse current confinement and current spreading. We measure linewidths as small as 6 MHz which we attribute to a small linewidth enhancement factor. This assumption is supported by calculations of the linewidth enhancement factor from optical resonator and optical gain simulations. The dependencies of noise on design parameters are general and therefore valid for single-mode VCSELs at other wavelengths and in other material systems.

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“…The results of Figure 3 and Table 2 show a decrease in Table 2 shows that " L increases with the modulation current, reaching about 13% for I p ¼ 95 mA with the proposed model, against 21% with Koch's model. The accuracy decrease of the proposed model can be explained by the accuracy decrease of the small signal analysis of G(N(t), S(t)) given by expression (14), when I p increases. The L decrease for I p ¼ 95 mA with Koch's model is due to the significant increase of jD ref (t)j when I p increases from 65 to 95 mA.…”

Section: Frequency Deviation At the Laser Outputmentioning

confidence: 98%

Improved model to discriminate adiabatic and transient chirps in directly modulated semiconductor lasers

Morgado

Cartaxo

2009

Journal of Modern Optics

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An improved model to discriminate the adiabatic and transient frequency chirping in directly modulated lasers (DMLs) is proposed. Such a model is very useful for evaluating per se the effects of modulation-induced adiabatic and transient frequency chirping of DMLs on optical communication system performance. It is shown that the mostly used model, relating the frequency deviation to the optical power waveform at laser output, can lead to remarkable inaccuracy in performance evaluation of directly-modulated (DM) multi-span systems operating at very high bit rates, such as 40 Gbit s À1 , by under-estimating the DML transient chirp. Using numerical simulation, a good agreement of the frequency chirping predicted by the proposed model with the one estimated by the laser rate equations is shown. Its good accuracy on assessing the performance of a DM multi-span system operating at 40 Gbit s À1 is also reported.

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High-Speed Lasers

Cited by 10 publications

References 197 publications

High-power single-mode InGaAsP/InP laser diodes for pulsed operation

High-power single-mode InGaAsP/InP laser diodes for pulsed operation

Noise Performance of Single-Mode VCSELs: Dependence on Current Confinement and Optical Loss

Improved model to discriminate adiabatic and transient chirps in directly modulated semiconductor lasers

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