High speed metal-semiconductor-metal photodetector manufactured on GaAs by low-temperature photoassisted metalorganic chemical vapor deposition

Boutros, K. S.; Roberts, John C.; Bedair, S. M.; Carruthers, Thomas F.; Frankel, M.Y.

doi:10.1063/1.114129

Cited by 6 publications

(2 citation statements)

References 16 publications

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“…Soole et al 1 discussed comprehensively the fact that the electric field distribution in the MSM device determines its photoresponse. Based on these discussions, the results obtained would provide a persuasive explanation of the broadening of the impulse response with applied bias seen experimentally 27 and in simulation 19. The simulation shows that the electric field distribution causes the electrons, dominant carriers in the structure, to be driven away from the surface; they are forced to circumvent the depletion region and follow longer paths that increase with bias as shown in Figure 6(a–d).…”

Section: Simulation Results and Discussionmentioning

confidence: 63%

Investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal photodetectors using two‐dimensional numerical simulation

Debbar

2011

Int J Numerical Modelling

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SUMMARYA detailed investigation of the dark electrical characteristics of the lateral metal-semiconductor-metal (MSM) structures is carried out using a two-dimensional numerical simulation based on the drift-diffusion model. The model includes image force barrier lowering and current-dependent recombination velocities at the Schottky contacts. The simulation was used to examine the details of the depletion region, the electric field distributions, and the current path in the active region of the planar structure. The obtained results were shown to be very helpful to understand and to explain various behaviours seen in the characteristics of the metal-semiconductor-metal (MSM) structures. The dark I-V characteristics of the structure were also calculated and compared with published experimental data. The results reveal the importance of the image force lowering on the characteristics and the hole injection at the forward contact beyond the flat band voltage.

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Section: Simulation Results and Discussionmentioning

confidence: 63%

Investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal photodetectors using two‐dimensional numerical simulation

Debbar

2011

Int J Numerical Modelling

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“…observed widening of the photoresponse waveform for their monolithic LT-GaAs MSM diodes with the bias increase and they attributed this behavior to a change in collection efficiency of carriers that are photogenerated deeply in the device. 38 We did not observed this phenomenon in our MSM diodes on freestanding LT-GaAs and believe that the reason for this discrepancy can be attributed to our optically thin absorbing layer of LT-GaAs. Figure 8(b) shows the dependence ofthe photoresponse amplitude on the excitation power for dc bias of 7.39 V. The observed saturation at the high-voltage levels is, in our opinion, due to the band-filling and electric-fieldscreening effects, as it was earlier observed by us for the PC switch.…”

Section: Resultsmentioning

confidence: 70%

<title>Ultrafast photoresponse and fabrication of freestanding LT-GaAs photoconductive devices</title>

Zheng

Adam

et al. 2003

SPIE Proceedings

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We report on fabrication and ultrafast photoresponse of novel, freestanding low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) devices. 1-tm-thick, LT-GaAs single-crystal films were grown by molecular beam epitaxy at the temperature range of 200 °C to 250 °C. Next, the films were patterned to the desired device sizes, lifted-off from their host substrates, and placed on predetermined places on either Si02/Si or MgO wafers. Our freestanding LT-GaAs devices consisted of either approximately 2O-jtm by 2O-m PC switches, or 15O-itm by 15O-itm metal-semiconductormetal (MSM) interdigitated structures with Ti/Au fingers patterned directly on top of the LT-GaAs film. For testing purposes, our devices were integrated with Ti/Au coplanar striplines, fabricated directly on S1O2/Si and MgO substrates.The test structures were illuminated with 100-fs-wide optical pulses and their time-resolved photoresponse was measured with an electro-optic sampling system, characterized by 200-fs time resolution and sub-millivolt sensitivity. Using 810-nm optical excitation, we recorded as narrow as 360-fs-wide electrical signals (1.25 THz, 3-dB bandwidth) for PC switches, resulting in 155 fs carrier lifetime in our freestanding LT-GaAs. For both types of devices, the photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Our freestanding photo-switches are robust and very reproducible. They are best suited for applications in hybrid optoelectronic and ultrafast electronic systems, since they can be placed at virtually any point on a test circuit.

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Low-temperature grown gallium arsenide (LT-GaAs) high-speed detectors

Currie

2023

Photodetectors

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High speed metal-semiconductor-metal photodetector manufactured on GaAs by low-temperature photoassisted metalorganic chemical vapor deposition

Cited by 6 publications

References 16 publications

Investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal photodetectors using two‐dimensional numerical simulation

Investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal photodetectors using two‐dimensional numerical simulation

<title>Ultrafast photoresponse and fabrication of freestanding LT-GaAs photoconductive devices</title>

Low-temperature grown gallium arsenide (LT-GaAs) high-speed detectors

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