High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

“…Data from [6] and [24] for the HPT, [6], [7], and [25]- [27] for the PIN-HBT, and [12], [13], [18], [28]- [31] for the APD-HBT have been plotted to compare with experimental data. The differences between calculation and experimental data up to 20 Gb/s are within 1 dB for the HPT and PIN-HBT receivers, which seems reasonable given that measured sensitivity values can vary by as much as 1 dB between identical channels of a PIN-HBT photoreceiver in [32].…”

“…Two integration schemes exist for the PIN-HBT combination. The first is the shared layer scheme where the base-collector (BC) region of the HBT also acts as the i-region for absorption in the PIN [2]- [6]. This design is simpler to implement, requiring a less complex grown structure and a simpler fabrication process [2], and is generally preferred for this reason.…”

Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor

“…E-mail: wliudmilFnkuFeduFtw InP-based HBTs have emerged as promising high-speed and highly optical-sensitive devices. Over recent years, InGaAs/InP HBTs have been attractive for the applications of opto-electronic mixers (OEMs) in optical subcarrier multiplexed (SCM) systems and photoreceivers in optoelectronic integrated circuits (OEICs) [1][2][3]. For developing high-speed HBTs, the base thickness should be reduced to decrease the base transit time.…”

A new phototransistor with uni-travelling-carrier and optically gradual coupling properties

“…The HPT's large inter− nal gain [3][4][5] and compatibility with heterojunction bipolar transistor (HBT) in epitaxial layer and process provide the possibility of fabrication of high performance and cost−ef− fective optoelectronic integrated circuits (OEICs) [6][7][8][9]. In the widely researched radio−over−fiber (ROF) system, the HPT based on InP material systems is regarded as one promising solution to the very simple base station because it can perform photodetection and frequency mixing simulta− neously [10][11][12][13].…”