High Speed Multiple Valued Logic Full Adder Using Carbon Nano Field Effect Transistor

Abstract

High speed Full-Adder (FA) module is a critical element in designing high performance arithmetic circuits. In this paper, we propose a new high speed multiple-valued logic FA module. The proposed FA is constructed by 14 transistors and 3 capacitors, using carbon nano-tube field effect transistor (CNFET) technology. Furthermore, our proposed technique has been examined in different voltages (i.e., 0.65v and 0.9v). The observed results reveal power consumption and power delay product (PDP) improvements compared to existing FA counterparts.

High-Speed, High-Frequency and Low-PDP, CNFET Full Adder Cells

“…CNT-Design2 15 works at frequencies less than 2 GHz except than 375 MHz. Remaining full adders, CNT-FA, 18 CNT-SyMuT, 40 and CNT-Design3 (proposed), are applicable at all frequencies. Thus they can meet the requirements of high frequency applications.…”

“…The¯rst category contains low-frequency full adders such as FA, 16 FA, 19 FA, 21 FA 22 and FA. 23 The second category contains high-frequency Full Adders such as FA, 17 FA, 15 FA, 18 FA, 20 FA, 40 and the proposed cell (Design3). Moreover, the best PDP belongs to CNT-Design3 at all frequencies.…”

“…Figure 2(a) shows the structure of a CNFET-based full adder cell proposed in Ref. 18. It utilizes 14 transistors and three capacitors in its design.…”

Energy Efficient Full Adder Cell Design with Using Carbon Nanotube Field Effect Transistors in 32 Nanometer Technology

“…In [1, 5, and 12] full adders were designed based on XOR/XNOR circuits. The capability of majority function encourage the designers to use this function in their designs (figure 2) [13][14][15][16][17][18]. The majority function show in equation3.…”

Low Power and High Speed D-Latch Circuit Designs Based on Carbon Nanotube FET

“…Using MOSFET technology to approach the novel circuit designs will be encountered our circuit to achieved the worse area, delay and power consumption ,so that we should replace the ancient silicon technology with a new nanotube technology with a nanometer dimensions also have better delay and power consumption [1], [2].Carbon nanotube field effect transistors with excellent properties such as high carrier mobility to near ballistic transport and high carrier velocity for fast switching is a promising candidate for silicon technology. CNTs are graphene sheets rolled into cylindrical and the direction of wrapping graphene is chirality [3].…”