High-speed operation of 1.5μm GaInAsP/InP optoelectronic integrated laser drivers

Direct Modulation of Semiconductor Lasers

“…Ury [52] and Fukuzawa [53] also produced integrated MESFET and laser chips in GaAs. Following these early [54][55][56][57][58][59], receivers [60][61][62][63][64][65], repeaters [66,67] and transceivers [68,69]. These circuits which combine both optical and electronic devices have come to be known as opto-electronic integrated circuits or OEIC's.…”

“…An example of an OEIC transmitter is shown in Fig. 16.8 [57]. This circuit combines a buried-heterostructure laser with three heterojunction bipolar transistor (HBT) drivers and a FET preamplifier.…”

“…16.8 not only increases the efficiency of microwave coupling, but also provides an opportunity for improved optical coupling, since the laser can be monolithically coupled to a waveguide, as discussed in Chapter 14. The substrate is semi-insulating InP [57] Ota et al [70] have described a monolithically integrated vertical-cavity-surfaceemitting laser (VCSEL) with an external cavity on a GaAs substrate. The length of the external cavity was 300 μm.…”