High-speed planar GaAs photoconductors with surface implant layers

Abstract

Selective implantation of silicon into GaAs is demonstrated as a simple method for modifying the response characteristics of low-doped planar GaAs photoconductors for optoelectronic circuits with varying requirements. Response times and sensitivities of the photoconductors were strongly dependent on the implantation dose and energy. Rise times and full width at half-maximum (FWHM) values of devices receiving low-dose implants were of the order of 40–150 ps. Rise times and FWHM values of devices which received higher dose implants were in the ranges 50–140 ps and 1–5 ns, respectively. The sensitivity of devices which received higher dose implants was about a factor of 100 (20 dB in optical power) greater than that of devices which received lower dose implants.

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

“…Future work will aim at identifying the origin of these states, via measurements on clean (adsorbate-free) devices in controlled ambient and by varying the concentration of impurities and defects, such as chlorine dopants and sulfur vacancies. Our results suggest that if the origin of the different photoresponse components can be corroborated, metal dichalcogenide phototransistors may be developed for the detection of pulsed light at frequencies in the kHz range, suitable for imaging applications, and possibly down to submillisecond response times typical for biased Si photoconductors or picoseconds achieved in III–V photoconductor devices …”

“…Our results suggest that if the origin of the different photoresponse components can be corroborated, metal dichalcogenide phototransistors may be developed for the detection of pulsed light at frequencies in the kHz range, suitable for imaging applications, and possibly down to submillisecond response times typical for biased Si photoconductors 66 or picoseconds achieved in IIIÀV photoconductor devices. 67…”