High-Speed Planar InP/InGaAs Avalanche Photodiodes with Optimized Electric Field Profile

Abstract

We confirmed in experiments that the avalanche in InGaAs diminishes !!e_g3in-bandwidth (GB) product of the InP/InGaAs avalanche photodiode (APD). GB product measurements agreed well with the calculated GB products, taking into cons_ideration the ionization in InP and InGaAs. By suppresting -!tt.t ternary layer_ avalanche and heterointerface pileup, wo fabricated a high-perform_ance APD with a large GB product of 95'GH; and a wide bandwidth of 8.5 GHz.