High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices

Maemoto, Toshihiko; Yamamoto, Hikaru; Konami, M.; Kajiuchi, A.; Ikeda, Takatoshi; Sasa, Shigehiko; Inoue, M.

doi:10.1002/1521-3951(199711)204:1<255::aid-pssb255>3.0.co;2-v

Cited by 19 publications

(4 citation statements)

References 7 publications

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“…In our conditions when powerful contact reservoirs fix the concentration at the points where it is maximal, such a re-distribution will increase the minimal value of n at x = 0 and hence increase the conductivity. Such superlinear behavior is experimentally observed in nanowire-based FETs 1,3,13,14 and differs noticeably from a sublinear CVC typical for bulk FETs and ballistic short-channel nanotube 6,15,16 structures.…”

Section: Linear Conductivity and Transconductancementioning

confidence: 67%

Field-Effect Transistor Structures With Quasi-One-Dimensional Channel

2004

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Drift–diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

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Section: Linear Conductivity and Transconductancementioning

confidence: 67%

Field-Effect Transistor Structures With Quasi-One-Dimensional Channel

2004

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“…In our conditions when powerful contact reservoirs fix the concentration n at the points where it is maximal, such a redistribution will increase the minimal value n in the center of channel, and hence, increase conductivity of the latter. Such superlinear behavior experimentally observed in nanowirebased transistors [8][9][10][11] differs noticeably from a sublinear dependence typical for both bulk FETs and ballistic nanotube [12][13][14] structures. We assume that the mechanism of the CVC saturation is due to the contact resistance ͑not presented here͒.…”

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confidence: 61%

Universal description of channel conductivity for nanotube and nanowire transistors

Rotkin

Ruda

Shik

2003

Applied Physics Letters

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A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowire charge density distribution.

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“…(ll),(l4),(l6),(17) neglected diffusion effects, which5. Current-voltage characteristic of the channelSo far we have dealt with the linear channel conductivity and transconductance at a low source-drain voltage Vd.…”

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confidence: 99%

Electrostatics of Nanowires and Nanotubes: Application for Field–effect Devices

Shik

Ruda

Rotkin

2007

Selected Topics in Electronics and Systems

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We present a quantum and classical theory of electronic devices with onedimensional (1D) channels made of a single carbon nanotube or a semiconductor nanowire. An essential component of the device theory is a self-consistent model for electrostatics of 1D systems. It is demonstrated that specific screening properties of 1D wires result in a charge distribution in the channel different from that in bulk devices. The drift-diffusion model has been applied for studying transport in a long channel 1D field-effect transistor. A unified self-consistent description is given for both a semiconductor nanowire and a singlewall nanotube. Within this basic model we analytically calculate equilibrium (at zero current) and quasi-equilibrium (at small current) charge distributions in the channel. Numerical results are presented for arbitrary values of the driving current. General analytic expressions, found for basic device characteristic, differ from equations for a standard bulk threedimensional field-effect device. The device characteristics are shown to be sensitive to the gate and leads geometry and are analyzed separately for bulk, planar and quasi-1D contacts. The basic model is generalized to take into account external charges which can be polarized and/or moving near the channel. These charges change the self-consistent potential profile in the channel and may show up in device properties, for instance, a hysteresis may develop which can have a memory application.

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High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices

Cited by 19 publications

References 7 publications

Field-Effect Transistor Structures With Quasi-One-Dimensional Channel

Field-Effect Transistor Structures With Quasi-One-Dimensional Channel

Universal description of channel conductivity for nanotube and nanowire transistors

Electrostatics of Nanowires and Nanotubes: Application for Field–effect Devices

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