High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

Recent Advances in Telecommunications Avalanche Photodiodes

“…Several approaches to eliminate the slow release of trapped holes, including the use of a chirped-period InP/InGaAs superlattice to form a pseudoquaternary In x Ga 1−x As 1−y P y layer [10] and continuous grading of the transition region [11], have been reported. However, the approach that has been most widely adopted utilizes a transition region consisting of one or more latticed-matched intermediate-bandgap In x Ga 1−x As 1−y P y layers [9], [12], [13]. A second modification to the original SAM APD structure has been the inclusion of a high-low doping profile in the multiplication region [14]- [16] similar to the reach-through structure that has been widely used for Si APDs [17].…”

Photodetectors and compatible low-noise amplifiers for long-wavelength light wave systems

“…It has been suggested [34] that this problem might be eliminated by compositional grading at the interface. This is supported by a recent report by Matsushima et al [35], in which it is shown that the "pile-up" effect can be greatly reduced by introducing an InGaAsP buffer layer (A, = 1.3 km) between the InP layer and the InGaAs layer, To obtain highly reliable APDs it will probably be necessary to abandon mesa structures in favor of planar structures with guard rings ( Figure 5). The primary difficulty to be solved in fabricating a planar structure is that of forming a guard ring with a higher breakdown voltage than that of the avalanching junction.…”

Panchromatic cathodoluminescence characterization of III‐V lattice‐mismatched heterostructures

“…Further, it is possible to see a difference in the dislocation density along the two < 110> type directions; the set of dislocations parallel to the [ 1101 direction disappears earlier than the other one oriented in the [l-101 perpendicular direction. It can be concluded that one set of MDs has a higher mobility and so they could be a-type dislocations (Matsushima et al 1982). This result also can be considered a simple example of the possibilities that the SSD-CL technique offers in the qualitative characterization of the nature of dislocations.…”

“…The In, _,Ga,As/InP pseudobinary alloy has assumed increasing importance in the past years as a leading base compound in the production of photodetectors for optical fibre communication systems (Kim et af. 1981, Lee et al 1981, Matsushima et al 1982, Shirai etal. 1982).…”