2004
DOI: 10.1116/1.1647591
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High-speed Si resonant cavity enhanced photodetectors and arrays

Abstract: Over the past decade a new family of optoelectronic devices has emerged whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonant microcavity ͓P. E. Green, IEEE Spectrum 13 ͑2002͔͒. The increased optical field allows photodetectors to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. We have demonstrated a variety of resonant cavity enhanced ͑RCE͒ photodetectors in compound semiconductors ͓B. Yang, … Show more

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Cited by 14 publications
(3 citation statements)
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“…An approach to achieve a spectral response tunable over a broad wavelength range is to incorporate organic semiconductors into a Fabry–Perot cavity device architecture. To obtain high spectral selectivity, the optical depth (absorption coefficient times thickness) of the photon-active layer sandwiched in between the two mirrors needs to be small. However, the typically very high absorption coefficients of the organic semiconductor, considered for organic photovoltaics or photodetectors, are extremely high to allow narrowband enhancement when incorporated as a 100 nm thin film in a cavity device architecture.…”
Section: Introductionmentioning
confidence: 99%
“…An approach to achieve a spectral response tunable over a broad wavelength range is to incorporate organic semiconductors into a Fabry–Perot cavity device architecture. To obtain high spectral selectivity, the optical depth (absorption coefficient times thickness) of the photon-active layer sandwiched in between the two mirrors needs to be small. However, the typically very high absorption coefficients of the organic semiconductor, considered for organic photovoltaics or photodetectors, are extremely high to allow narrowband enhancement when incorporated as a 100 nm thin film in a cavity device architecture.…”
Section: Introductionmentioning
confidence: 99%
“…The design and fabrication of arrays of SOI-based resonant-cavity enhanced (RCE) photodetectors with high quantum efficiency, capable of operating at data rates up to 10-Gbps has been previously demonstrated by the authors [2]. The low absorption coefficient of silicon (Si) at 850nm is enhanced by the use of a Fabry-Perot resonator, delimited by the Si-air interface and the 90% reflectivity, two-period Si-Si0 2 distributed Bragg reflector.…”
Section: Silicon-based Photodetectionmentioning
confidence: 99%
“…An elegant solution to realize a filterless and narrowband photodetector is to place the photoactive material inside a resonant optical microcavity. This has been demonstrated for both organic and inorganic materials. For the latter, near-infrared spectral responses with a full-width-at-half-maximum (fwhm) less than 10 nm have been achieved using two multilayer dielectric mirrors, deposited using epitaxy techniques. , However, the detection range, which is proportional to the distance between the mirrors of the cavity, was limited to a narrow wavelength range of less than 100 nm, due to the rather small free spectral range (FSR, i.e., the wavelength spacing between adjacent resonance peaks). The FSR of a cavity decreases quadratically with decreasing resonance wavelength, and in general, Fabry–Perot cavities yield a polychromatic, overtone containing a response spectrum.…”
mentioning
confidence: 99%