High speed switching in quantum Dot/Ti-TiOx nonvolatile memory device

Hot Injection-Based Synthesized Colloidal CdSe Quantum Dots Embedded in Poly(4-vinylpyridine) (PVP) Matrix Form a Nanoscale Heterostructure for a High On–Off Ratio Memory-Switching Device

“…33 Charge confinement in CdSe nanoparticles leads to the switching behavior, and the conduction mechanism during the operation of the device changes from injection limited to bulk conduction. 19 Charge trapping in the CdSe quantum dot along with a Coulomb blockade due to the presence of various types of metal oxide layers gives rise to high speed, 34 switching but with a smaller on−off ratio. 35,36 This has shown negative differential resistance as well.…”

“…Charge confinement in CdSe nanoparticles leads to the switching behavior, and the conduction mechanism during the operation of the device changes from injection limited to bulk conduction . Charge trapping in the CdSe quantum dot along with a Coulomb blockade due to the presence of various types of metal oxide layers gives rise to high speed, consistent switching but with a smaller on–off ratio. , This has shown negative differential resistance as well. In a quantum dot, the metal–metal oxide and the quantum dot device configuration increased the on–off ratio by 1 order and the devices worked fast. , A combination of conducting small organic molecules and polymer with CdSe or a core–shell quantum dot formed a heterojunction that led to switching in the device. − These composites on a flexible surface formed a synaptic device architecture that can work as a neural network, and this is mainly due to the charge trapping in the quantum dots .…”

Effect of E-Beams Irradiation Dose on the Sensing Properties of Pt-Functionalized Reduced Graphene Oxides Following Annealing of the 6 nm-Thick Pt Layer

“…The nano era has been, a tremendous increase in the number of reports discussing methods of fabricating and characterizing a variety of nanomaterials and nanostructures [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Among these, a new generation of gas sensors based on graphene materials such as graphene oxide, and reduced graphene oxide (RGO) have drawn attention, due to their room temperature operation, facile synthesis, and the ease with which their electrical properties can be tailored [21].…”