High Speed VCSEL Technology and Applications

Makarov, O. Yu.; Shchukin, V. A.; Kalosha, V. P.; Ledentsov, N. N.; Chorchos, Łukasz; Sanayeh, Marwan Bou; Turkiewicz, J. P.

doi:10.1109/jlt.2022.3149372

Cited by 34 publications

(8 citation statements)

References 52 publications

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“…Figure 8 shows the far-field beam characteristics of the 650nm VCSELs. It can be seen that the VCSEL with 14µm aperture size produces a donut-shaped far-field beam shape, which is typically observed in larger aperture VCSELs due to current crowding near the perimeter of the oxide aperture perimeter [13]. The calculated 1/e 2 beam divergence angle ranges from around 19° at low bias currents and increases to around 25° by increasing the bias current and temperature.…”

Section: Analysis Of 65nm Vcselsmentioning

confidence: 84%

650nm red VCSELs with improved temperature performance

Ghods

Dummer

Johnson

2023

Vertical-Cavity Surface-Emitting Lasers XXVII

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In this paper, we report on design optimization, design, and fabrication of single-junction red VCSELs emitting at the wavelength of ~650nm with improved power and temperature performance. This has been achieved through redesigning the VCSEL epitaxial structure by optimizing the number of top and bottom mirror pairs to reduce the optical losses, optimizing p-DBRs' doping concentration levels, changing the oxide layer thickness and position relative to the active region, and adjusting the wavelength detuning between peak wavelength of the gain medium and the Fabry-Perot dip wavelength. Moreover, several changes have been implemented to improve the carrier confinement in the active region to improve the performance of these devices at higher temperatures. These include optimizing the net strain across the active region, modifying the electron blocking layers, and also optimizing the number and thickness of InGaPbased multiple quantum wells. The CW characterization results indicate a record-high output optical power of 4.25mW at room temperature for a 14m VCSEL. The temperature-variable L-I-V characterization results indicate a maximum lasing temperature of 50°C for the 14m VCSEL, while the 5m device has shown to be lasing up to 80°C. All devices have shown to be highly multi-mode spectrally, but with different far-field beam profiles. Moreover, the results indicate that the output light from these devices are strongly polarized in the <011> direction. Overall, the results depict a promising roadmap into developing high brightness red VCSELs which have superior performance over a broad temperature range.

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Section: Analysis Of 65nm Vcselsmentioning

confidence: 84%

650nm red VCSELs with improved temperature performance

Ghods

Dummer

Johnson

2023

Vertical-Cavity Surface-Emitting Lasers XXVII

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“…During the course of VCSEL evolution from the first proposal of a GaAs surface emitting laser 2 to current commercial ones, VCSELs have undergone significant design changes. With the increasing demand for large bitrates of the high-speed data communication industry 3,4 , VCSELs are dominating short reachOptical Interconnects, OIs, and present the preferred choice for replacing other semiconductor lasers also at medium distances due to their inherent advantages. VCSEL structure can be easily and rapidly tested on-wafer at low cost, show low power consumption, low threshold current, high-speed modulation 5 , low-temperature sensitivity 6 , and small symmetric beam divergence of the fundamental mode, favoring good optical coupling 7 .…”

Section: Introductionmentioning

confidence: 99%

Multi-hole aperture VCSELs: single mode, high power, low resistance

Maricar,

Sapunov,

Tian

et al. 2024

Vertical-Cavity Surface-Emitting Lasers XXVIII

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The essential performance parameters of present generations of Vertical Cavity Surface Emitting Lasers (VCSELs) like output power, f3dB cut-off frequency, are limited by extrinsic parameters. The most important among them is the shift of the gain maximum out of resonance with the DBR transmission due to increased heating of the active layer with increasing current, leading to a red shift of the emission. Another important limitation of f3dB is the unavoidable resistance by the p-type mirror and capacitance of the actual device generations. We present here a novel Multi-Hole Aperture (MuHA) VCSEL approach 1 , based on variable aperture shapes and sizes, leading to increased output power for single/multi-mode emission, reduced series resistance, and larger f3dB of the devices. Holes in symmetric or asymmetric arrangements are etched from the top to the oxidizable layer(s). The aperture shape and size is realized by controlled oxidation of the oxidizable layer(s) through the holes. The holes are subsequently filled with gold, which effectively remove heat from the active layer. In MuHA VCSELs, the temperature of the active area for any given current is thus at least 50% lower than that of a comparable VCSELs processed using a "classical" design, resulting in larger rollover current, f3dB,… Combining MuHA to Multi-Aperture devices called Multi Aperture VCSELs (MAVs) is expected to lead to pseudo single mode emission with an output power of 8-10 mW across 50 μm Multi-Mode Fiber (MMF), enabling to cover much larger transmission distances than hitherto.

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“…As contemporary VCSELs have an achievable directly modulated bandwidth limited to approximately 25 GHz due to thermal effects and electrical parasitics 1 , several mechanisms to extend the bandwidth have been pursued such as coupled cavities 2 , injection locking 3 , VCSEL mini-arrays 4 , and using optical coupling to create a photon-photon resonance (PPR) 5 .…”

Section: Introductionmentioning

confidence: 99%

Investigating supermodes in coupled dual-element photonic crystal VCSEL arrays: a comparative analysis under strong and weak anti-guiding conditions

North,

Jahan,

Pflug

et al. 2024

Vertical-Cavity Surface-Emitting Lasers XXVIII

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We report on the mode evolution of coupled dual-element laser arrays biased in the coherently coupled region, exploring both theoretical and experimental aspects. Utilizing a complex waveguide simulation, we identify two supermodes operating within the coherently coupled region. The formation of the supermodes leads to enhanced output power, visibility, and a photon-photon resonance frequency surpassing the carrier-photon resonance frequency. Such favorable attributes are facilitated by the formation of anti-guided cavities through current injection. Finally, we conduct a comparative analysis of mode characteristics under strong and weakly anti-guiding conditions to identify the impact on the supermode characteristics.

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High Speed VCSEL Technology and Applications

Cited by 34 publications

References 52 publications

650nm red VCSELs with improved temperature performance

650nm red VCSELs with improved temperature performance

Multi-hole aperture VCSELs: single mode, high power, low resistance

Investigating supermodes in coupled dual-element photonic crystal VCSEL arrays: a comparative analysis under strong and weak anti-guiding conditions

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