High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes

Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, O.; Kimukin, Ïbrahim; Özbay, Ekmel

doi:10.1063/1.1412592

Cited by 63 publications

(35 citation statements)

References 22 publications

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“…To improve the p-ohmic contact quality, a 30-nm-thick p-type GaN cap layer was grown on top of p-Al Ga N layer. A five-step microwave compatible semiconductor fabrication process was utilized to complete the device fabrication [15]. In the first two steps, ohmic contacts were formed.…”

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confidence: 99%

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

Bıyıklı

Kimukin

Aytür

et al. 2004

IEEE Photon. Technol. Lett.

120

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Abstract-We report solar-blind Al Ga 1 N-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values up to 6 V. The device responsivity increased with reverse bias and reached 0.11 A/W at 261 nm under 10-V reverse bias. The detectors exhibited a cutoff around 283 nm, and a visible rejection of four orders of magnitude at zero bias. Low dark current values led to a high differential resistance of 9.52 10 15 . The thermally limited detectivity of the devices was calculated as 4.9 10 14 cm Hz 1 2 W 1 .Index Terms-AlGaN, dark current, detectivity, heterostructure, high-performance, p-i-n photodiode. SOLAR-BLIND detectors with long-wavelength cutoff around 280 nm have important applications including missile plume sensing, flame detection, chemical-biological agent sensing, and covert space-to-space communications [1]. With the advent in material growth of high-quality Al Ga N ternary alloys, AlGaN-based solar-blind photodetectors emerged as a potential alternative for the photomultiplier tube (PMT) and silicon-based solar-blind detector technology. They have the advantage of intrinsic solar-blindness, and therefore, do not need complex and costly filters. In addition, AlGaN-based solar-blind detectors can operate under harsh conditions due to their wide bandgap and robust material properties [2]. Several research groups have demonstrated high-performance solar-blind photodetectors using Al Ga N material systemDetectivity is an important detector performance parameter which gives the signal-to-noise performance of the device. For low noise detection, detectivity should be as high as possible. The typical detectivity of a cooled PMT is about cm Hz W around 300 nm [13]. A comparable detectivity performance ( cm Hz W at 275 nm) was reported recently with a solar-blind AlGaN-based back-illuminated p-i-n photodiode [14]. In this letter, we report the design, fabrication, and characterization of solar-blind AlGaN p-i-n photodiodes with record dark current and detectivity performance. The measured dark current was below 3 fA at 6-V re- verse bias and a PMT-exceeding solar-blind detectivity of cm Hz W at 267 nm was achieved. The p-i-n photodiode wafer was grown by metal-organic chemical vapor deposition on sapphire substrate. The detector structure was designed for front (p-side) illumination. The active absorption region of the photodiode was formed with a 100-nm-thick unintentionally doped Al Ga N layer which was sandwiched between a 250-nm-thick n+ GaN layer and a 10-nm-thick p-type-doped Al Ga N layer. To improve the p-ohmic contact quality, a 30-nm-thick p-type GaN cap layer was grown on top of p-Al Ga N layer. A five-step microwave compatible semiconductor fabrication process was utilized to complete the device fabrication [15]. In the first two steps, ohmic contacts were formed. A 250-nm deep dry-etch for n+ ohmic contact was done via CCl F -based reactive ion etching (RIE). This was follow...

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mentioning

confidence: 99%

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

Bıyıklı

Kimukin

Aytür

et al. 2004

IEEE Photon. Technol. Lett.

120

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“…The UV RCE detector consisted of a thin 70-nm GaN absorption layer, Al Ga N ohmic contact layer and a 20 pair bottom AIN-Al Ga N Bragg mirror centered at 350 nm. The details of the epitaxial structures can be found elsewhere [16]- [18].…”

Section: B Design Of Photodiode Structuresmentioning

confidence: 99%

“…Recently, we have demonstrated ITO-Schottky photodiodes on AlGaAs-GaAs [15] and AlGaN-GaN [16]- [18] material systems for near-IR and UV detection, respectively. In this paper, we review our ITO-Schottky research and present the measurement results of our newly fabricated IR m RCE ITO-Schottky photodiodes on InAlGaAs-InP and InGaAsP-InP heterostructures.…”

mentioning

confidence: 99%

ITO-Schottky Photodiodes for High-Performance Detection in the UV–IR Spectrum

Bıyıklı

Kimukin

Bütün

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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“…However, deposition of GaN layers with a low thermal budget is still a major challenge. Traditional methods for the deposition of GaN layers are metal organic chemical vapor deposition, [8][9][10] molecular beam epitaxy, 11,12 and hydride vapor phase epitaxy. 13 However, integration of GaN devices on flexible substrates is hampered by these high temperature growth techniques.…”

Section: Introductionmentioning

confidence: 99%

Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

et al. 2014

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Abstract. Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

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High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes

Cited by 63 publications

References 22 publications

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

ITO-Schottky Photodiodes for High-Performance Detection in the UV–IR Spectrum

Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

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