High-speed μc-Si films deposition and large-grain poly-Si films deposition by surface wave discharge

Hotta, Yasuaki; Toyoda, Hirotaka; Sugai, Hideo

doi:10.1016/j.tsf.2006.10.053

Cited by 27 publications

(10 citation statements)

References 13 publications

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“…These peaks originate from the (111), (220), and (311) crystal planes of silicon, respectively. 14,22 The occurrence of these three diffraction peaks suggests that the Si crystallites can be formed at X ¼ 4.0. With the further increase of X, the intensities of all these diffraction peaks are gradually increased while the full widths at half maximum of all these diffraction peaks become smaller, indicating that the crystallite size becomes larger and the degree of crystallinity has further increased.…”

Section: Resultsmentioning

confidence: 99%

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

Cheng

Tam

Xu³

et al. 2010

Nanoscale

100

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Nanophase nc-Si/a-SiC films that contain Si quantum dots (QDs) embedded in an amorphous SiC matrix were deposited on single-crystal silicon substrates using inductively coupled plasma-assisted chemical vapor deposition from the reactive silane and methane precursor gases diluted with hydrogen at a substrate temperature of 200 degrees C. The effect of the hydrogen dilution ratio X (X is defined as the flow rate ratio of hydrogen-to-silane plus methane gases), ranging from 0 to 10.0, on the morphological, structural, and compositional properties of the deposited films, is extensively and systematically studied by scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, Fourier-transform infrared absorption spectroscopy, and X-ray photoelectron spectroscopy. Effective nanophase segregation at a low hydrogen dilution ratio of 4.0 leads to the formation of highly uniform Si QDs embedded in the amorphous SiC matrix. It is also shown that with the increase of X, the crystallinity degree and the crystallite size increase while the carbon content and the growth rate decrease. The obtained experimental results are explained in terms of the effect of hydrogen dilution on the nucleation and growth processes of the Si QDs in the high-density plasmas. These results are highly relevant to the development of next-generation photovoltaic solar cells, light-emitting diodes, thin-film transistors, and other applications.

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Section: Resultsmentioning

confidence: 99%

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

Cheng

Tam

Xu³

et al. 2010

Nanoscale

100

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show abstract

“…One can notice that there exist three major diffraction peaks at 2h = 28.4°, 47.3°, and 56.1°in the XRD patterns when the carbon content X C is less than 10.7at.%. These three diffraction peaks are ascribed to (1 1 1), (2 2 0), and (3 1 1) crystal planes of silicon [18,25]. One can also notice that the intensity of the (1 1 1) diffraction peak is much higher than the intensities of the (2 2 0) and (3 1 1) peaks, suggesting that the deposited films have a preferential growth along the (1 1 1) crystallographic orientation.…”

Section: X-ray Diffractionmentioning

confidence: 87%

Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

Cheng

Ostrikov

2010

Acta Materialia

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“…23,29 In this way, one can eventually obtain high-quality polycrystalline Si under reasonably low temperatures. 34…”

Section: Discussionmentioning

confidence: 99%

Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas: enabling nanocrystallinity at very low hydrogen dilution

Cheng

Ostrikov

2009

J. Mater. Chem.

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High-speed μc-Si films deposition and large-grain poly-Si films deposition by surface wave discharge

Cited by 27 publications

References 13 publications

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation

Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas: enabling nanocrystallinity at very low hydrogen dilution

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