High speeds in a single chip

Kasper, E.; Kissinger, Dietmar; Russer, P.; Weigel, Robert

doi:10.1109/mmm.2009.934691

Cited by 31 publications

(9 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The state of the art of today's silicon-based semiconductor technologies, such as the silicon-germanium heterojunction bipolar transistor (SiGe HBT) and the silicon metal-oxide-semiconductor fi eld-effect transistor (MOSFET), allow for the low-cost fabrication of transceiver front-end circuitry with operating frequencies even above 100 GHz [1]. These key elements of silicon high-frequency semiconductor electronics have opened the door for the millimeter-wave consumer market in communication technology and sensor applications.…”

Section: Integrated Test For Silicon Front Endsmentioning

confidence: 99%

Integrated Test for Silicon Front Ends

Kissinger

Laemmle

Maurer³

et al. 2010

IEEE Microwave

Self Cite

View full text Add to dashboard Cite

O ngoing developments in integrated circuit (IC) technology have resulted in fully integrated monolithic systems-on-chip (SoC). The state of the art of today's silicon-based semiconductor technologies, such as the silicon-germanium heterojunction bipolar transistor (SiGe HBT) and the silicon metal-oxide-semiconductor fi eld-effect transistor (MOSFET), allow for the low-cost fabrication of transceiver front-end circuitry with operating frequencies even above 100 GHz [1]. These key elements of silicon high-frequency semiconductor electronics have opened the door for the millimeter-wave consumer market in communication technology and sensor applications.After they are manufactured, RF and millimeterwave frontends and SoCs have to be tested for correct functionality and performance before they are passed on to the consumer. Testing of high-frequency blocks in radio-frequency integrated circuits (RFICs) is a complex, time-consuming, and costly task for engineers. External tests necessitate expensive, high-performance

show abstract

Section: Integrated Test For Silicon Front Endsmentioning

confidence: 99%

Integrated Test for Silicon Front Ends

Kissinger

Laemmle

Maurer³

et al. 2010

IEEE Microwave

Self Cite

View full text Add to dashboard Cite

show abstract

“…The mmWave band offers many advantages compared to low‐GHz frequency bands. It has a broad bandwidth, high communication security, small antenna dimensions, high‐speed data transmission, and compatibility with Si technology . Polished metallic structures have advantages such as low path loss, robust mechanical support, and high isolation from external noise.…”

Section: Introductionmentioning

confidence: 99%

77‐ GH z mmWave antenna array on liquid crystal polymer for automotive radar and RF front‐end module

et al. 2019

View full text Add to dashboard Cite

This paper introduces a low‐cost, high‐performance mmWave antenna array module at 77 GHz. Conventional waveguide transitions have been replaced by 3D CPW‐microstrip transitions which are much simpler to realize. They are compatible with low‐cost substrate fabrication processes, allowing easy integration of ICs in 3D multi‐chip modules. An antenna array is designed and implemented using multilayer coupled‐fed patch antenna technology. The proposed 16 × 16 array antenna has a fractional bandwidth of 8.4% (6.5 GHz) and a 23.6‐dBi realized gain at 77 GHz.

show abstract

“…Continuous advancements in Silicon-based technologies [3] offer system integration alternatives which compete with GaAs based solutions. In addition to the advantage of being cost-effective, Silicon-based technologies lead to a unique and unparalleled opportunity for a holistic [4] distributed design of RF, analog, and digital circuits with electromagnetic radiating elements, i.e.…”

Section: Introductionmentioning

confidence: 99%

Network model of coupled integrated antennas

Russer¹,

Mukhtar²,

Wane³

et al. 2013

2013 International Conference on Electromagnetics in Advanced Applications (ICEAA)

View full text Add to dashboard Cite

In this paper we propose a broadband equivalent circuit model of coupled integrated antennas using a generalized Foster approach. A largesignal multi-harmonic X-parameter model representation of On-Chip Schottky Diodes is derived for effective Antenna-Detector Co-Simulation, Co-Design and Co-Verification. Concurrent optimization of the Schottky Diode arrays geometry and large-signal electrical performances (such as with respect to cutoff frequency, parasitics, quality-factor, sensitivity, responsiveness, etc.) is carried out based on careful experimental characterizations.

show abstract

High speeds in a single chip

Cited by 31 publications

References 31 publications

Integrated Test for Silicon Front Ends

Integrated Test for Silicon Front Ends

77‐ GH z mmWave antenna array on liquid crystal polymer for automotive radar and RF front‐end module

Network model of coupled integrated antennas

Contact Info

Product

Resources

About