High-Spike Barrier Photodiodes Based on 2D Te/WS<sub>2</sub> Heterostructures

Yu, Huihui; Wang, Yunan; Zeng, Haoran; Cao, Zhihong; Zhang, Qinghua; Gao, Li; Hong, Mengyu; Wei, Xiaofu; Zheng, Yue; Zhang, Zheng; Zhang, Xiankun; Zhang, Yue

doi:10.1021/acsnano.4c03729

ACS Nano

2024

DOI: 10.1021/acsnano.4c03729

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High-Spike Barrier Photodiodes Based on 2D Te/WS₂ Heterostructures

Huihui Yu,

Yunan Wang,

Haoran Zeng

et al.

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Cited by 4 publications

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Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics

Yu,

Zeng,

Zhang

et al. 2024

Adv Funct Materials

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Due to the outstanding physical properties and the integrated characteristics, such as the gapless band structure, high state density, high conductivity, dangling‐bond‐free surface, and tunable Fermi level, two‐dimensional layered topological semimetals (2D LTSMs) exhibit a promising application prospect for including electrode contact and terahertz detection. Despite the surging in attention, a comprehensive strategy is still crucial to meet the necessary conditions for the practical application of 2D LTSMs. According to the fermion types and the band structures, 2D LTSMs can be divided into Dirac semimetals, Weyl semimetals, and nodal‐line semimetals. This review comprehensively encapsulates the intrinsic properties, typical synthesis methods, and applications in electronics and optoelectronics about these 2D LTSMs. To establish the fundamental theory, typical crystal structures, and physical properties of different 2D LTSMs are summarized at first. The effective synthesis strategies including exfoliation, molecular beam epitaxy, and vapor deposition are analyzed systematically. Finally, the article emphasizes the exploration of applications, significant challenges, and promising development directions of 2D LTSMs, which will drive 2D LTSMs to become the promisingly leading technology for next‐generation electronic and optoelectronic systems.

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Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics

Yu,

Zeng,

Zhang

et al. 2024

Adv Funct Materials

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Electronics and Optoelectronics Based on Tellurium

Zha,

Dong,

Huang

et al. 2024

Advanced Materials

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As a true 1D system, group‐VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te‐centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large‐scale circuits. Additionally, performance optimization strategies are discussed for Te‐based field‐effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.

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A Perspective on tellurium-based optoelectronics

Zha,

Tong,

Huang

et al. 2024

Applied Physics Letters

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Tellurium (Te) has been rediscovered as an appealing p-type van der Waals semiconductor for constructing various advanced devices. Its unique crystal structure of stacking of one-dimensional molecular chains endows it with many intriguing properties including high hole mobilities at room temperature, thickness-dependent bandgap covering short-wave infrared and mid-wave infrared region, thermoelectric properties, and considerable air stability. These attractive features encourage it to be exploited in designing a wide variety of optoelectronics, especially infrared photodetectors. In this Perspective, we highlight the important recent progress of optoelectronics enabled by Te nanostructures, which constitutes the scope of photoconductive, photovoltaic, photothermoelectric photodetectors, large-scale photodetector array, and optoelectronic memory devices. Prior to that, we give a brief overview of basic optoelectronic-related properties of Te to provide readers with the knowledge foundation and imaginative space for subsequent device design. Finally, we provide our personal insight on the challenges and future directions of this field, with the intention to inspire more revolutionary developments in Te-based optoelectronics.

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High-Spike Barrier Photodiodes Based on 2D Te/WS₂ Heterostructures

Cited by 4 publications

References 49 publications

Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics

Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics

Electronics and Optoelectronics Based on Tellurium

A Perspective on tellurium-based optoelectronics

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High-Spike Barrier Photodiodes Based on 2D Te/WS2 Heterostructures

Cited by 4 publications

References 49 publications

Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics

Two‐Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics

Electronics and Optoelectronics Based on Tellurium

A Perspective on tellurium-based optoelectronics

Contact Info

Product

Resources

About

High-Spike Barrier Photodiodes Based on 2D Te/WS₂ Heterostructures