High spin polarization, large perpendicular magnetic anisotropy and room-temperature ferromagnetism by biaxial strain and carrier doping in Janus MnSeTe and MnSTe

Abstract

Strain- and doping-dependent magnetic anisotropy energies and Curie temperatures of MnSeTe and MnSTe monolayers.

Enhanced ferromagnetism, perpendicular magnetic anisotropy and high Curie temperature in the van der Waals semiconductor CrSeBr through strain and doping

“…Strain application and carrier doping have been demonstrated to be effective approaches to attain the above targets. 16–49 Therefore, we applied biaxial strains in the range from −8% to 8% and doped the system with a carrier concentration ranging from 0.7 holes per unit cell to 0.7 electrons per unit cell. We define the biaxial strain as ( a − a 0 )/ a 0 × 100%, where a 0 and a are the lattice constants of the unstrained and strained CrSeBr monolayers, respectively.…”

“…16,18,21,22,24,26–28 Furthermore, relevant theoretical and experimental reports have confirmed the feasibility of using strain and doping for manipulating the MAE and T C of 2D intrinsic ferromagnetic (FM) materials. 29–49 It is noteworthy that among these 2D CrXY monolayers, only monolayer CrSBr has been successfully synthesized experimentally, and many recent theoretical studies have predicted that the CrOY (Y = F/Cl/Br/I) and CrSY (Y = Cl/Br/I) monolayers have a significant strain and exhibit electrically tunable magnetic order as well as T C . Being an isoelectronic analogue of CrSBr, the 2D ferromagnetic CrSeBr monolayer exhibits a much higher electron mobility (6.10 × 10 3 cm 2 V −1 s −1 12 ) than CrSBr (about 0.24 × 10 3 cm 2 V −1 s −1 50 ).…”