High‐Stability and Low‐Noise Multilevel Switching in In<sub>3</sub>SbTe<sub>2</sub> Material for Phase Change Photonic Memory Applications

Arjunan, Mozhikunnam Sreekrishnan; Saxena, Nishant; Mondal, Anirban; Dixit, Tejendra; Adarsh, K. V.; Manivannan, Anbarasu

doi:10.1002/pssr.202000354

Cited by 9 publications

(18 citation statements)

References 31 publications

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“…The power consumption of the device is estimated to be about 74/56 nW for set/reset operation (Fig. S8b), which is extremely low in comparison with other phase-change photonic memories [42][43][44][45] . The switching time of our devices could be very short but limited by our testing system, since the hysteresis effect could be established in several microseconds according to previous reports 46 .…”

Section: Ix-based Valleytronic Memorymentioning

confidence: 96%

Interlayer-Exciton Based Nonvolatile Valleytronic Memory

Ye¹,

Shen²,

Ren³

et al. 2020

Preprint

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Analogous to conventional charge-based electronics, valleytronics aims at encoding data via valley degree of freedom, enabling new routes for information processing. Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by transition metal dichalcogenides (TMDs) carry valley-polarized information and thus would find promising applications in valleytronic devices. Although great progress of IX based valleytronic devices has been achieved, nonvolatile valleytronic memories are still challenging. Here, we demonstrate IX based nonvolatile valleytronic memory in a WS2/WSe2 HS. The emission characteristics of IX exhibit a large excitonic/valleytronic hysteresis upon cyclic-voltage sweeping. Importantly, IX emission can be electrically switched between a bright state and a dark state with large light-intensity and helicity contrast of about 1.7 and 1.8, respectively, which can be ascribed to the chemical-doping of O2/H2O redox couple between TMDs and substrate. Taking advantage of the large hysteresis, IX can be utilized for manipulating and nonvolatile storing valley information and IX based nonvolatile valleytronic memory has been successfully demonstrated. These findings open up an avenue for nonvolatile valleytronic memory and would motivate more investigations on valleytronic devices.

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Section: Ix-based Valleytronic Memorymentioning

confidence: 96%

Interlayer-Exciton Based Nonvolatile Valleytronic Memory

Ye¹,

Shen²,

Ren³

et al. 2020

Preprint

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“…However, the high optical contrast during the single‐shot pulses has achieved lower optical variation and thereby leads to improved SNR. [ 65 ] In addition, the delay in the optical switching observed during the multishot laser pulses has been overcome with the help of single‐shot laser pulses. [ 66 ] To achieve ultrafast switching, a single‐shot picosecond laser pulse has been irradiated for the multilevel SET and RESET process.…”

Section: Multilevel Switching Techniquesmentioning

confidence: 99%

“…[ 51,61 ] Furthermore, single‐shot programming has also demonstrated better thermal stability during the multilevel switching compared with the multishot accumulative programming technique. [ 65 ]…”

Section: Multilevel Switching Techniquesmentioning

confidence: 99%

“…In particular, the single‐phase In 3 SbTe 2 (IST) PCM exhibits higher crystallization temperature ( T c = 260 °C), and thereby leads to better thermal stability. [ 65,72 ] Moreover, the suitability of IST material has also been investigated on the electrical programming of multibit applications. [ 73 ] At the same time, the potentiality of IST for multilevel switching photonic memories is yet to be properly explored.…”

Section: Multilevel Switching Techniquesmentioning

confidence: 99%

“…However, the recent studies in multilevel optical switching demonstrated (based on the free‐space optics) using single‐phase IST show that 3‐bit (8‐levels) multilevel states are feasible with a minimum step size of 1% reflectivity change as shown in Figure . [ 65 ] The optical tuning capability of the different multilevel states explored using IST is also shown in Figure 5. In addition, Figure 5d shows the reproducibility of the different multilevel states in IST by irradiating optimized laser pulses.…”

Section: Multilevel Switching Techniquesmentioning

confidence: 99%

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Multilevel Switching in Phase‐Change Photonic Memory Devices

Arjunan

Durai

Manivannan

2021

Physica Rapid Research Ltrs

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Multilevel storage in chalcogenide‐based phase‐change materials is one of the desired characteristics to design neuromorphic and in‐memory computing applications. However, precisely controlling the crystalline and amorphous fraction to achieve reliable multilevel states is one of the key challenges in multilevel switching. Herein, multilevel switching is focused on the aspect of optical domain, where it enjoys the benefits of higher bandwidth with low delay connectivity suitable for non‐von Neumann architecture. The essential requirements for multilevel optical switching are discussed in terms of programming techniques, novel device structures, and emerging materials for its better optimization. Furthermore, the impact of nature of crystallization mechanism on the multilevel switching for different families of phase‐change materials is reviewed. In addition, the multilevel switching for neuromorphic engineering and in‐memory computation based on the integrated photonic memory devices are assessed. Finally, several challenges and different strategies to improve the performance of multilevel switching in phase‐change materials are discussed and thereby signify its importance for the design of future on‐chip phase‐change photonic memory devices.

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Low‐Power Crystallization Process in In₃SbTe₂ Phase Change Memory Devices with Thin Oxide Layer

Pathak,

Pandey

2024

Physica Status Solidi (b)

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Phase change memory (PCM) technology is a strong contender for the next‐generation memory in today's data‐centric era. In3SbTe2 (IST) phase change material is recently explored due to its good thermal stability, rapid electrical switching, and significant resistance contrast for multibit storage. However, the main concern in PCM devices is the high‐energy usage during the phase switching process. Herein, a thin oxide (HfO2) layer is inserted between the IST active layer and bottom electrode in PCM device. Such a device exhibits amorphous‐to‐crystalline phase switching (crystallization or SET operation) at a lower voltage of (2.1 ± 0.1) V and 66% reduction in energy consumption compared to the device using only IST active layer. Higher temperature of 688 K is acquired in the device with the oxide layer demonstrating that the Joule heat is effectively confined by the oxide layer assisting the crystallization process in the active layer at a less voltage. Such a device also exhibits a significant resistance contrast of ≈2 orders magnitude, allowing for stable data storage. These results reveal that the switching performance of PCM device using IST phase change material is improved by the oxide layer, which is beneficial for energy‐efficient, nonvolatile data storage applications.

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High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications

Cited by 9 publications

References 31 publications

Interlayer-Exciton Based Nonvolatile Valleytronic Memory

Interlayer-Exciton Based Nonvolatile Valleytronic Memory

Multilevel Switching in Phase‐Change Photonic Memory Devices

Low‐Power Crystallization Process in In₃SbTe₂ Phase Change Memory Devices with Thin Oxide Layer

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High‐Stability and Low‐Noise Multilevel Switching in In3SbTe2 Material for Phase Change Photonic Memory Applications

Cited by 9 publications

References 31 publications

Interlayer-Exciton Based Nonvolatile Valleytronic Memory

Interlayer-Exciton Based Nonvolatile Valleytronic Memory

Multilevel Switching in Phase‐Change Photonic Memory Devices

Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer

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High‐Stability and Low‐Noise Multilevel Switching in In₃SbTe₂ Material for Phase Change Photonic Memory Applications

Low‐Power Crystallization Process in In₃SbTe₂ Phase Change Memory Devices with Thin Oxide Layer