High temperature annealing studies of strontium ion implanted glassy carbon

Odutemowo, O.S.; Malherbe, J.B.; Prinsloo, Linda C.; Langa, D.F.; Wendler, E.

doi:10.1016/j.nimb.2015.10.054

Cited by 25 publications

(24 citation statements)

References 12 publications

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“…Previous work on ion species implanted in GC include Be [8], Cs [9], Sr [10], Co [11] K [12], Na [13], Ti [14], N [15], W [16] but after extensive literature research no data for diffusion studies of Cd implanted in GC was found. Most of these studies investigated the improvement of mechanical properties of GC surface layer after ion implantation [17].…”

Section: Introductionmentioning

confidence: 99%

Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Hlatshwayo

Sebitla

Njoroge

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

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The migration behavior of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2×10 16 ions/cm 2 and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 hour and isothermally annealed at 350 °C up to 4 hours. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 hour caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 hour caused Cd to diffuse towards the bulk while for annealing time > 1 hour Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

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Section: Introductionmentioning

confidence: 99%

Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Hlatshwayo

Sebitla

Njoroge

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

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“…The large amount of ion implantation induced damage is expected to affect the indium diffusion during subsequent thermal anneal processes. This broad band has been observed in glassy carbon implanted with 320 keV Xe ions [14], 360 KeV Cd ions [24] and 200 keV Sr ions [28] at room temperature and fluences of 10 14 -10 16 ions/cm 2 . Figure 1, 2 and 7 show the Raman spectra fitted using the Breit-Wigner-Fano (BWF) + Lorentzian lines combination, and good fits were obtained indicating that the combination was appropriate for analysing the G and D bands.…”

Section: Thermal Annealingmentioning

confidence: 69%

“…Raman spectroscopy analysis of GC is highly sensitive to structural changes in the region between the surface and the projected range of implanted ions [24,28]. The origin of the Raman signal is expected to be limited to the implanted region of GC.…”

Section: Thermal Annealingmentioning

confidence: 99%

Structural modification of indium implanted glassy carbon by thermal annealing and SHI irradiation

Njoroge

Sebitla

Theron

et al. 2017

Vacuum

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The structural changes, migration behaviour of indium (In) implanted into glassy carbon (GC) and the effect of annealing on radiation damage introduced by ion implantation have been investigated. The GC substrates were implanted with 360 keV indium ions to a fluence of 2.0×10 16 ions/cm 2 at room temperature (RT) and 350 °C. The RT implanted samples were isochronally annealed in vacuum between 200 and 1000 °C for 1 hour. The 350 °C implanted GC substrates were irradiated 167 MeV with Xe 26+ ions at room temperature to a maximum fluence of 5.0×10 14 ions/cm 2. The implanted GC structure was damaged and had an almost amorphized structure. Annealing of the RT implanted samples resulted in some recrystallization which increased with temperature and the diffusion behaviour of implanted In. Fickian diffusion of implanted In started after annealing at 300 °C, however, structural changes in the GC were observed after annealing at 200 °C. Annealing at 400 and 600 °C resulted in the diffusion of In toward the surface of GC accompanied by a loss of In. The SHI irradiation of the 350 °C implanted samples at increasing fluence, did not result in a detectable migration of implanted In.

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“…Previous studies have shown that diffusion of the strontium implanted in the glassy carbon substrates only starts occurring at 300 o C [8,9]. Therefore, the temperature of the sample was …”

Section: Methodsmentioning

confidence: 99%

In-situ RBS studies of strontium implanted glassy carbon

Odutemowo

Malherbe

Theron

et al. 2016

Vacuum

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Highlights• Glassy carbon samples were implanted with 200 keV Sr ions at room temperature to a fluence of 1 × 10 16 Sr + /cm 2 . The implanted samples were annealed in vacuum at temperature ranging from 23 °C-650 °C and in-situ real-time RBS analysis was carried out during the annealing process in order to investigate the diffusion behaviour of the implanted strontium.• The vacancy distribution profile derived from SRIM simulation shows that the radiation damage introduced by ion bombardment is concentrated towards the surface region of the glassy carbon substrate.• During low temperature annealing, the Sr atoms moved deeper into the bulk of the glassy carbon substrate due to the presence of vacancy and interstitial defects in the surface region of the glassy carbon. Migration of the implanted Sr towards the surface of the glassy carbon was observed at temperatures ranging from 560 °C-650 °C.• Migration of the implanted Sr towards the surface of the glassy carbon was observed at temperatures ranging from 560 °C-650 °C. The migration towards the surface was accompanied with segregation of Sr towards the surface. The segregated strontium was retained on the glassy carbon substrate and no loss of strontium was recorded.• The diffusion of Sr was limited to the damaged region of the glassy carbon and no diffusion into the pristine glassy carbon was observed. The results of the study show that glassy carbon is an excellent containment material for radioactive strontium. ABSTRACTThe diffusion behaviour of strontium in glassy carbon was investigated using in-situ real time

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High temperature annealing studies of strontium ion implanted glassy carbon

Cited by 25 publications

References 12 publications

Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Structural modification of indium implanted glassy carbon by thermal annealing and SHI irradiation

In-situ RBS studies of strontium implanted glassy carbon

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