High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

Abstract

Abstract:This paper experimentally studies the temperature dependencies of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450 • C. Their I-V characteristics show that SBDs indeed function as rectifiers at extremely high temperatures, but forward conduction and reverse blocking performance significantly deteriorates when the temperature exceeds 200 • C. C-V characteristics show diffusion potential reduction with temperature, and p-n junction characteristics were found for the junction barrier Schottky structure.

Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance

“…The intersection of the Schottky diodes I-V curves of SiC diodes measured at different temperatures was observed by Funaki et al [7]. A similar effect was measured in [8] in Al/Ti/4H-SiC diodes.…”

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

“…Generally, low temperature measurements are effective in revealing the current transport mechanism especially for tunneling and the effects of inhomogeneity. Many researchers carried out the temperature dependency of I-V and C-V characteristics at high temperatures (>300 K) to associate the physical phenomena of the current conduction mechanism occurring in the devices [14][15][16]. This implies that high temperature is also of importance in effectively understanding the carrier transport mechanism of Schottky barrier diodes.…”

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

“…Moreover, temperature-dependence becomes an issue when the resistance of the drift layer is combined with thermionic theory. [26][27][28] Our task is to develop a unified model for the forward characteristics of SBD and JBS structures by extending the SBD model to accommodate the distributed resistance brought about by the p+ implant. The temperature-dependence of our previously reported model 29) is improved to accommodate the temperature-dependent model equations consistently in the thermionic theory and the resistance effects.…”