High Temperature Conductive Stability of Indium Tin Oxide Films

Li, Haiou; Guo, Lei; Liu, Xingpeng; Sun, Tangyou; Li, Qi; Zhang, Fabi; Xiao, Gongli; Fu, Tao; Chen, Yonghe

doi:10.3389/fmats.2020.00113

Cited by 24 publications

(16 citation statements)

References 30 publications

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“…The oxidation current starts to increase resulting from the rst decomposition of PS at 4.3 V (Fig. 1c), 43 which proves that PS gives priority to the formation of a CEI on the cathode surface. The blank electrolyte has a higher reduction current and widens the range of potentials at 1.3 V and 0.7 V, as shown in Fig.…”

Section: Characterization Of the Electrolytesmentioning

confidence: 74%

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi_0.8Co_0.1Mn_0.1O₂ batteries at elevated temperatures

et al. 2022

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Section: Characterization Of the Electrolytesmentioning

confidence: 74%

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi_0.8Co_0.1Mn_0.1O₂ batteries at elevated temperatures

et al. 2022

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“…For ion-assisted processes, oxygen atoms and ions outside the crystal lattice are embedded into the volume of the film 30 – 32 . This affects further crystallization during annealing when oxygen is annihilated with vacancies 36 . Wherein the crystalline phase is more localized in films e-beam evaporated with ion assistance.…”

Section: Resultsmentioning

confidence: 99%

ITO film stack engineering for low-loss silicon optical modulators

Lotkov

Baburin

Ryzhikov

et al. 2022

Sci Rep

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The Indium Tin Oxide (ITO) platform is one of the promising solutions for state-of-the-art integrated optical modulators towards low-loss silicon photonics applications. One of the key challenges on this way is to optimize ITO-based thin films stacks for electro-optic modulators with both high extinction ratio and low insertion loss. In this paper we demonstrate the e-beam evaporation technology of 20 nm-thick ITO films with low extinction coefficient of 0.14 (Nc = 3.7·1020 cm−3) at 1550 nm wavelength and wide range of carrier concentrations (from 1 to 10 × 1020 cm−3). We investigate ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure to achieve the desired optical and electrical parameters. Here we report the mechanism of oxygen migration in ITO film crystallization based on observed morphological features under low-energy growth conditions. Finally, we experimentally compare the current–voltage and optical characteristics of three electro-optic active elements based on ITO film stacks and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550 nm under ± 16 V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-dB losses.

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“…For ion-assisted processes, oxygen atoms and ions outside the crystal lattice are embedded into the volume of the lm [29][30][31]. This affects further crystallization during annealing when oxygen annihilation with vacancies occurs [35]. Wherein the crystalline phase is more localized in the lms evaporated with ion-assistance.…”

Section: Resultsmentioning

confidence: 99%

Silicon on-chip Electro-optic Modulation With Ito Film Stacks

Lotkov

Baburin

Ryzhikov

et al. 2021

Preprint

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Indium tin oxide (ITO) platform is one of the promising solutions towards state-of-the-art integrated optical modulators for silicon photonics applications. We demonstrate the way to obtain both high extinction ratio and low insertion loss electro-optic modulation with ITO-based film stack. By investigating e-beam evaporated 20 nm-thick ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure, a low carrier concentration (from 1·1020 to 2·1020 cm-3) is achieved. The mechanism of oxygen migration in ITO film crystallization is proposed based on morphological features observed under low-energy growth conditions. We compare three electro-optic modulator active elements (current-voltage and optical characteristics) and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550nm under ±16V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-db losses.

show abstract

High Temperature Conductive Stability of Indium Tin Oxide Films

Cited by 24 publications

References 30 publications

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi_0.8Co_0.1Mn_0.1O₂ batteries at elevated temperatures

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi_0.8Co_0.1Mn_0.1O₂ batteries at elevated temperatures

ITO film stack engineering for low-loss silicon optical modulators

Silicon on-chip Electro-optic Modulation With Ito Film Stacks

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High Temperature Conductive Stability of Indium Tin Oxide Films

Cited by 24 publications

References 30 publications

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi0.8Co0.1Mn0.1O2 batteries at elevated temperatures

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi0.8Co0.1Mn0.1O2 batteries at elevated temperatures

ITO film stack engineering for low-loss silicon optical modulators

Silicon on-chip Electro-optic Modulation With Ito Film Stacks

Contact Info

Product

Resources

About

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi_0.8Co_0.1Mn_0.1O₂ batteries at elevated temperatures

A functional electrolyte additive enabling robust interphases in high-voltage Li‖LiNi_0.8Co_0.1Mn_0.1O₂ batteries at elevated temperatures