Novel in-Plane Semiconductor Lasers IV 2005
DOI: 10.1117/12.591827
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High-temperature continuous-wave operation of 1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers

Abstract: High temperature continuous-wave (CW) operation of 1310-nm single-frequency grating-outcoupled surface emitting (GSE) semiconductor lasers with output powers exceeding 3.0 mW into a multi-mode fiber, threshold currents below 30 mA and with > 30dB side-mode suppression ratios at temperatures of up to 85 C are reported. These lasers consist of a 400 µm long horizontal cavity, and a 15 µm long second-order outcoupler grating sandwiched between 200 µm long first-order distributed Bragg reflector (DBRs) gratings. H… Show more

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“…Thus, for example, four wavelengths each modulated at 3.125 Gigabits/second can be multiplexed to yield a single 10 Gigabit/second link (the extra 2 Gb/s provides overhead for error prevention in CWDM systems). The multiplexer package described in this report incorporates a Grating-outcoupled Surface-Emitting (GSE) laser 1,2,3,4 which is shown in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, for example, four wavelengths each modulated at 3.125 Gigabits/second can be multiplexed to yield a single 10 Gigabit/second link (the extra 2 Gb/s provides overhead for error prevention in CWDM systems). The multiplexer package described in this report incorporates a Grating-outcoupled Surface-Emitting (GSE) laser 1,2,3,4 which is shown in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%