2018
DOI: 10.3365/kjmm.2018.56.4.272
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High-temperature Corrosion of CrAlSiN Thin Films in N2/0.1%H2S Gas

Abstract: Cr 25.2 Al 19.5 Si 4.7 N 50.5 thin films were deposited on steel substrates by cathodic arc plasma deposition. They consisted of alternating fcc-Cr(Al)N/hcp-Al(Cr,Si)N nanolayers. They were corroded at 900 and 1000 o C for 5-100 h in N 2 /0.1%H 2 S gas atmosphere. Their corrosion mechanism, the structure of the formed scales, and the role of film-constituting elements during corrosion were studied. Despite the presence of hydrogen and sulfur in the corrosion gas, the films displayed good corrosion resistance b… Show more

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Cited by 1 publication
(2 citation statements)
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“…50 The plasmaized Si reacts with the O 2 gas remaining in the CAPD chamber to generate the Si oxides. 51,52 The presence of SiO 2 is consistent with the diffraction spots observed in the ED pattern, at approximately 3.64 Å. In the Si 2p spectrum, the main peaks are observed at 99.0 and 98.4 eV, which may be assigned to the Si−Si bonds of Si 0 .…”
Section: Structures Of the Si Films Fabricated Via Capdsupporting
confidence: 82%
See 1 more Smart Citation
“…50 The plasmaized Si reacts with the O 2 gas remaining in the CAPD chamber to generate the Si oxides. 51,52 The presence of SiO 2 is consistent with the diffraction spots observed in the ED pattern, at approximately 3.64 Å. In the Si 2p spectrum, the main peaks are observed at 99.0 and 98.4 eV, which may be assigned to the Si−Si bonds of Si 0 .…”
Section: Structures Of the Si Films Fabricated Via Capdsupporting
confidence: 82%
“…56 Si−O is derived from the reaction of plasmaized Si with the O 2 gas remaining in the CAPD chamber. 51,52 The S 1s and P 1s HAXPES peaks observed at 2470.0 and 2148.9 eV, respectively, may be assigned to the PS 4 3− bonds in amorphous Li 3 PS 4 , 35 which corresponds to the Li 3 PS 4 film. Another P 1s peak observed at 2146.5 eV is assigned to the P 2 S 6 4− bonds.…”
Section: Fabrication and Electrochemicalmentioning
confidence: 98%