High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&amp;2 in supercritical ammonia/ammonium chloride solution

Kimmel, A.-C.L.; Malkowski, Thomas F.; Griffiths, Steven; Hertweck, Benjamin; Steigerwald, Thomas G.; Freund, Lisa P.; Neumeier, Steffen; Göken, Mathias; Speck, James S.; Schluecker, Eberhard

doi:10.1016/j.jcrysgro.2018.06.018

Cited by 13 publications

(13 citation statements)

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“…Several of these alloys have already been used as materials for ammonothermal pressure vessels; namely, the nickel-base superalloys Inconel 718 [ 11 ], Inconel 625 [ 32 ], Rene41 [ 33 ], and Haynes 282 [ 34 ] and the molybdenum-base alloy TZM [ 35 ]. The experimental cobalt-base superalloys CoWAlloy1 and CoWAlloy2 have been investigated regarding their chemical stability in supercritical ammonia solutions containing ammonium chloride mineralizer [ 36 ]. The commercial nickel-base superalloys U720Li (ATI720 TM ) [ 23 ] and AD730 [ 24 ] were additionally taken into consideration due to their favorable mechanical strength in combination with relatively low contents of elements with high mass attenuation coefficients.…”

Section: Resultsmentioning

confidence: 99%

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

et al. 2022

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For the fundamental understanding and the technological development of the ammonothermal method for the synthesis and crystal growth of nitrides, an in situ monitoring technique for tracking mass transport of the nitride throughout the entire autoclave volume is desirable. The feasibility of using high-energy computed tomography for this purpose was therefore evaluated using ex situ measurements. Acceleration voltages of 600 kV were estimated to yield suitable transparency in a lab-scale ammonothermal setup for GaN crystal growth designed for up to 300 MPa operating pressure. The total scan duration was estimated to be in the order of 20 to 40 min, which was sufficient given the comparatively slow crystal growth speed in ammonothermal growth. Even shorter scan durations or, alternatively, lower acceleration voltages for improved contrast or reduced X-ray shielding requirements, were estimated to be feasible in the case of ammonoacidic growth, as the lower pressure requirements for this process variant allow for thinned autoclave walls in an adapted setup designed for improved X-ray transparency. Promising nickel-base and cobalt-base alloys for applications in ammonothermal reactors with reduced X-ray absorption in relation to the maximum operating pressure were identified. The applicability for the validation of numerical simulations of the growth process of GaN, in addition to the applicability of the technique to further nitride materials, as well as larger reactors and bulk crystals, were evaluated.

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Section: Resultsmentioning

confidence: 99%

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

et al. 2022

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“…All syntheses were performed in supercritical ammonia with custom‐built autoclaves made of nickel based superalloy (Haynes 282) sustaining a maximum pressure of 170 MPa at 1070 K , . The peripheral devices consist of the hand valve (SITEC), pressure transmitter (HBM P2VA1/5000 bar) and a safety head with an integrated rupture disc (SITEC).…”

Section: Methodsmentioning

confidence: 99%

Ammonothermal Synthesis of the Mixed‐Valence Nitrogen‐Rich Europium Tantalum Ruddlesden‐Popper Phase Eu^IIEu^III₂Ta₂N₄O₃

et al. 2019

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The mixed‐valence europium tantalum nitride oxide EuIIEuIII2Ta2N4O3 was synthesized with the ammonothermal approach in high‐pressure custom‐built autoclaves. The reaction was performed at 1070 K and a maximum pressure of 170 MPa in an ammonobasic environment with NaN3 and NaOH as mineralizers. EuIIEuIII2Ta2N4O3 was obtained as a black microcrystalline powder. Single‐crystal synchrotron diffraction data revealed a Ruddlesden‐Popper phase crystallizing in space group P42/mnm (no. 136) with a = 5.7278(1), c = 19.8149(5) Å and Z = 4. The crystallographic results from single‐crystal diffraction data have been confirmed by powder diffraction and TEM measurements. Anion positions were assigned to O and N based on bond‐valence (BVS), lattice energy (MAPLE) and charge distribution calculations (CHARDI). EuII and EuIII are crystallographically ordered. The band gap was estimated from UV/Vis measurements employing the Kubelka–Munk function to be 0.6 eV, which supports the black color and the mixed valence of europium.

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“…Mo, Nb, Pd, and Pt all were reported to be corrosion resistant (with Mo and Pt even in alloy forms) when NH4Cl was the mineralizer [147], with Nb losing its mechanical stability; on the other hand, Ni was observed to be corroded without getting transported [165,166], while maintaining its chemical passivity as an alloy [147].…”

Section: Ammonoacidic Conditionsmentioning

confidence: 99%

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and solubility of elements, to synthesized crystalline nitride materials and their properties. Initially, the potential of emerging and novel nitrides is discussed, motivating their synthesis in single crystal form. This is followed by a summary of our current understanding of the reactivity/solubility of species and the state-of-the-art single crystal synthesis for GaN, AlN, AlGaN, BN, InN, and, more generally, ternary and higher order nitrides. Investigation of the synthesized materials is presented, with a focus on point defects (impurities, native defects including hydrogenated vacancies) based on GaN and potential pathways for their mitigation or circumvention for achieving a wide range of controllable functional and structural material properties. Lastly, recent developments in autoclave technology are reviewed, based on GaN, with a focus on advances in development of in situ technologies, including in situ temperature measurements, optical absorption via UV/Vis spectroscopy, imaging of the solution and crystals via optical (visible, X-ray), along with use of X-ray computed tomography and diffraction. While time intensive to develop, these technologies are now capable of offering unprecedented insight into the autoclave and, hence, facilitating the rapid exploration of novel nitride synthesis using the ammonothermal method.

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High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution

Cited by 13 publications

References 32 publications

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

Ammonothermal Synthesis of the Mixed‐Valence Nitrogen‐Rich Europium Tantalum Ruddlesden‐Popper Phase Eu^IIEu^III₂Ta₂N₄O₃

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

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High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution

Cited by 13 publications

References 32 publications

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

Ammonothermal Synthesis of the Mixed‐Valence Nitrogen‐Rich Europium Tantalum Ruddlesden‐Popper Phase EuIIEuIII2Ta2N4O3

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

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Ammonothermal Synthesis of the Mixed‐Valence Nitrogen‐Rich Europium Tantalum Ruddlesden‐Popper Phase Eu^IIEu^III₂Ta₂N₄O₃