High‐Temperature Defect Structure of Lanthanum Cuprate

Abstract

High-temperature (650" to SSOOC) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La : Cu ratio was therefore estimated to be 2.000 ? 0.001. By comparison with existing oxygen nonstoichiometry data, the high-temperature electron hole mobility and density-ofstates were estimated. [