High‐temperature defect study of tellurium‐enriched CdTe:In

Grill, R.; Fochuk, P.; Franc, J.; Nahlovskyy, B.; Höschl, P.; Moravec, P.; Zakharuk, Z. I.; Nykonyuk, Ye.; Panchuk, O.

doi:10.1002/pssb.200564762

Cited by 20 publications

(6 citation statements)

References 19 publications

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“…Details of calculations relevant for respective models can be found in [12,13]. Results of the modeling using version (iii) are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The , E A = 0.54 E g , where E g is the gap energy and the second level of divalent donor Te Cd being E D2 (Te Cd ) = 0.5 E g . Simulations in model (iii) assuming the formation of an A-centre do not allow the determination of relevant defect levels [13]. The presented fit was obtained assuming [Pb] = 4 × 10 17 cm -3 total Pb density, where Pb is located both separately in the Cd sublattice being a shallow donor Pb Cd and in the A-centre (Pb…”

Section: Resultsmentioning

confidence: 99%

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High temperature electrical properties of CdTe〈Pb〉 crystals under Te saturation

Fochuk

Grill

Kadys

et al. 2007

Physica Status Solidi (b)

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The point defect equilibrium of CdTe〈Pb〉 single crystals under well-defined Te vapor pressure was investigated up to 1070 K. At 630 -900 K these crystals showed p-type conductivity and at higher temperatures -native n-type one. During measurements the hole density reached up to ∼ 2 × 10 17 cm -3 at 800 K. The main acceptor dominant species, which determined the electrical properties of crystals, was supposed to be the (Pb-associate with its level in the gap located at E V + 0.42 -0.45 eV. Above 900 K native electrons began to influence the conductivity type. Three models of point defect structure were used to describe the galvanomagnetic data -(i) frozen defect structure, (ii) defect structure with shallow or deep acceptor levels fixed during thermal cycles and native defects being in three-phase solid -liquid -gas (SLG) equilibrium, and (iii) defect structure without any fixed energy level and defect densities being determined by the SLG equilibrium. The FWM technique confirmed p-type photoconductivity at 300 K, but also revealed bipolar carrier generation at high photoexcitation levels with very fast electron trapping.

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“…Details of calculations relevant for respective models can be found in [12,13]. Results of the modeling using version (iii) are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

High temperature electrical properties of CdTe〈Pb〉 crystals under Te saturation

Fochuk

Grill

Kadys

et al. 2007

Physica Status Solidi (b)

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“…Tellurium antisite (Te Cd ) has been proposed as a possible candidate to form a deep donor level, which is believed to be responsible for the pinning of the Fermi energy near the middle of the band gap in semi-insulating CdTe [16,[67][68][69]. The ground-state structure of (Te Cd ) in the neutral charge state undergoes a Jahn-Teller distortion [69,70].…”

Section: B (O Te -Te CD ) Complexmentioning

confidence: 99%

First-principlesDFT+GWstudy of oxygen-doped CdTe

Flores¹,

Orellana²,

Menéndez-Proupín³

2016

Phys. Rev. B

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The role of oxygen doping in CdTe is addressed by first-principles calculations. Formation energies, charge transition levels, and quasiparticle defect states are calculated within the DFT + GW formalism. The formation of a new defect is identified, the (O Te-Te Cd) complex. This complex is energetically favored over both isovalent (O Te) and interstitial oxygen (O i), in the Te-rich limit. We find that the incorporation of oxygen passivates the harmful deep energy levels associated with (Te Cd), suggesting an improvement in the efficiency of CdTe based solar cells. Substitutional (O Cd) is only stable in the neutral charge state and undergoes a Jahn-Teller distortion. We also investigate the diffusion profiles of interstitial oxygen and find a low-energy diffusion barrier of only 0.14 eV between two structurally distinct interstitial sites.

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“…An exception is CdTe:In with precisely performed high temperature investigations and HTDE models [8][9][10][11]. HTDE of undoped ZnSe [12,13] and CdSe [14] are different.…”

Section: Introductionmentioning

confidence: 96%

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

Lott

Shinkarenko

Volobujeva

et al. 2007

Physica Status Solidi (b)

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High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe : In and of CdSe : In are compared. There are differencies in In-doping mechanisms of II -VI compounds. When HTEC isotherms and isobars of ZnSe : In and of CdSe : In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (

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High‐temperature defect study of tellurium‐enriched CdTe:In

Cited by 20 publications

References 19 publications

High temperature electrical properties of CdTe〈Pb〉 crystals under Te saturation

High temperature electrical properties of CdTe〈Pb〉 crystals under Te saturation

First-principlesDFT+GWstudy of oxygen-doped CdTe

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

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