1990
DOI: 10.1007/bf00638047
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High temperature deformation behaviour of MoSi2 and WSi2 single crystals

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Cited by 53 publications
(6 citation statements)
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“…Stacking faults on (001) in as-grown and plastically deformed MoSi 2 have been observed by many researchers. [22,23,29–31]. We have also observed similar stacking faults on (001) formed during high-temperature compression tests of [001]-oriented single crystals of WSi 2 with the C11 b crystal structure and proposed a possible formation mechanism, in which the (001) stacking fault is formed by the climb motion of 1/6<331> partial dislocations that originate from a <100> perfect dislocation.…”
Section: Resultssupporting
confidence: 58%
“…Stacking faults on (001) in as-grown and plastically deformed MoSi 2 have been observed by many researchers. [22,23,29–31]. We have also observed similar stacking faults on (001) formed during high-temperature compression tests of [001]-oriented single crystals of WSi 2 with the C11 b crystal structure and proposed a possible formation mechanism, in which the (001) stacking fault is formed by the climb motion of 1/6<331> partial dislocations that originate from a <100> perfect dislocation.…”
Section: Resultssupporting
confidence: 58%
“…In spite of the fact that crystal structure, lattice parameters, melting point, coefficient of thermal expansion, elastic constants and electronic structure of WSi 2 are very similar to those of MoSi 2 , the plastic deformation behaviour differs significantly. The studies on deformation behaviour of single crystals of WSi 2 by Kimura and co-workers 41,42 have indicated that single crystals of WSi 2 oriented near the n001m and n100m directions exhibit plastic flow at 1300uC and above, with slip occurring on the {01 ¯3}n331m and {11 ¯0}n331m systems, respectively (Table 15). In addition, stacking faults have been observed in the {110} planes.…”
Section: Deformation Behaviour Of Other Silicidesmentioning
confidence: 99%
“…They observed dislocation motion on {0 1 1}<1 0 0> and {0 1 3}<3 3 1> slip systems at room temperature, whereas deformation on the other slip systems only took place at temperatures higher than 300 • C [1]. In general, slip on {0 1 1}<1 0 0> followed Schmid's law, but in contrast, studies on {0 1 3}<3 3 1> show the highest CRSS in the exact [0 0 1] orientation and a CRRS value close to the other known slip systems in orientations away from [0 0 1] [1,2,26,27,28,29]. That is, Schmid's law is not valid for slip on {0 1 3}<3 3 1> slip systems, because the CRSS strongly depends on crystal orientation.…”
Section: Background: Structure and Deformation Of Mosimentioning
confidence: 88%
“…They attributed the high anisotropy to the activation of two different slip systems: only the hard (high CRSS) {0 1 3}<3 3 1> slip system was activated in orientations close to [0 0 1], whereas in orientations away from [0 0 1], deformation on the soft (low CRSS) {1 1 0}<3 3 1> slip system could also be detected. The study published by Kimura et al [27] is in good agreement with the results of Umakoshi et al [26]. The works of Mitchel and Maloy [28] and Maloy et al [29] are controversial concerning the possible slip systems in MoSi 2 , identifying the operating slip systems as {0 1 3}<3 3 1> below 1300 • C and {0 1 1}<1 1 1> above 1300 • C in the [0 0 1] orientation, and {1 1 0}<1 1 1> and {0 1 1}<1 0 0> in all other deformation directions.…”
Section: Background: Structure and Deformation Of Mosimentioning
confidence: 99%